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Band alignment and polarization engineering inκ-Ga_(2)O_(3)/GaN ferroelectric heterojunction

查看全文 作　　者：Yanting [1]Chen;Hongkai [1]Ning;Yue [1]Kuang;Xing-Xing [1]Yu;He-He [1]Gong;Xuanhu [1]Chen;Fang-Fang [1]Ren;Shulin [1]Gu;Rong [1]Zhang;Youdou [1]Zheng;Xinran [1]Wang;Jiandong [1]Ye 高影响力作者 机构地区：[1]School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China高影响力机构 出　　处：《Science China(Physics,Mechanics & Astronomy)》索引2022年第65卷第7期,共6页高影响力期刊 基　　金：supported by the State Key Research and Development Project of Guangdong,China(Grant No.2020B010174002);the National Natural Science Foundation of China(Grant Nos.U21A20503,and U21A2071)。 摘　　要：Ferroelectric-semiconductor heterostructures offer an alternative strategy to manipulate polarization towards advanced devices with engineered functionality and improved performance.In this work,we report on the heteroepitaxial construction,band structure alignment and polarization engineering of the single-phasedκ-Ga_(2)O_(3)/GaN ferroelectric/polar heterojunction.A type-II band alignment is determined at theκ-Ga_(2)O_(3)/GaN polar hetero-interface,with a valence band offset of(1.74±0.1)eV and a conduction band offset of(0.29■0.1)eV.Besides the band edge discontinuity,charge dipoles induced by spontaneous polarization lead to the observed band bending with built-in potentials of 0.9 and 0.33 eV,respectively,at theκ-Ga_(2)O_(3)surface andκ-Ga_(2)O_(3)/GaN interface.The polarization switching properties of ferroelectricκ-Ga_(2)O_(3)are identified with a remanent polarization of approximately 2.7μC/cm^(2)via the direct hysteresis remanent polarization/voltage(P-V)loop measurement.These findings allow the rational design ofκ-Ga_(2)O_(3)ferroelectric/polar heterojunction for the application of power electronic devices,advanced memories and even ultra-low loss negative capacitance transistors. 关 键 词：wide-bandgap semiconductors ferroelectric polarization band alignment
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