A novel approach for designing efficient broadband photodetectors expanding from deep ultraviolet to near infrared

查看全文 作　　者：Nan [1]Ding;Yanjie [1]Wu;Wen [1,2]Xu;Jiekai [1]Lyu;Yue [1]Wang;Lu [1]Zi;Long [1]Shao;Rui [1]Sun;Nan [1]Wang;Sen [1]Liu;Donglei [1]Zhou;Xue [1]Bai;Ji [3]Zhou;Hongwei [1]Song

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University,Changchun 130012,China;[2]Key Laboratory of New Energy and Rare Earth Resource Utilization of State Ethnic Affairs Commission,Dalian Minzu University,Dalian 116600,China;[3]State Kay Lab of New Ceramics and Fine Processing,Department of Materials Science and Engineering,Tsinghua University,Beijing 100084,China

出　　处：《Light(Science & Applications)》索引2022年第11卷第5期,共13页

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.62175025,11974143,and 11974142);the Key Program of NSFCGuangdong Joint Funds of China(U1801253);Outstanding Young Talents of Dalian(2021RJ07);the Natural Science Foundation of Jilin Province(20200201252JC). 摘　　要：Broadband photodetection(PD)covering the deep ultraviolet to near-infrared(200–1000 nm)range is significant and desirable for various optoelectronic designs.Herein,we employ ultraviolet(UV)luminescent concentrators(LC),iodinebased perovskite quantum dots(PQDs),and organic bulk heterojunction(BHJ)as the UV,visible,and near-infrared(NIR)photosensitive layers,respectively,to construct a broadband heterojunction PD.Firstly,experimental and theoretical results reveal that optoelectronic properties and stability of CsPbI3 PQDs are significantly improved through Er3+doping,owing to the reduced defect density,improved charge mobility,increased formation energy,tolerance factor,etc.The narrow bandgap of CsPbI3:Er3+PQDs serves as a visible photosensitive layer of PD.Secondly,considering the matchable energy bandgap,the BHJ(BTP-4Cl:PBDB-TF)is selected as to NIR absorption layer to fabricate the hybrid structure with CsPbI3:Er3+PQDs.Thirdly,UV LC converts the UV light(200–400 nm)to visible light(400–700 nm),which is further absorbed by CsPbI3:Er3+PQDs.In contrast with other perovskites PDs and commercial Si PDs,our PD presents a relatively wide response range and high detectivity especially in UV and NIR regions(two orders of magnitude increase that of commercial Si PDs).Furthermore,the PD also demonstrates significantly enhanced air-and UV-stability,and the photocurrent of the device maintains 81.5%of the original one after 5000 cycles.This work highlights a new attempt for designing broadband PDs,which has application potential in optoelectronic devices. 关键词：OPTOELECTRONIC HETEROJUNCTION ULTRAVIOLET

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A novel approach for designing efficient broadband photodetectors expanding from deep ultraviolet to near infrared

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