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Structural and electrical properties of ferroelectric BiFeO_(3)/HfO_(2) gate stack for nonvolatile memory applications

查看全文 作　　者：Nitish [1]Yadav;Kamal Prakash [1]Pandey;Pramod Narayan [2]Tripathiy 高影响力作者 机构地区：[1]Department of Electronics and Communication Engineering,Shambhunath Institute of Engineering and Technology,Allahabad,Uttar Pradesh 211015,India;[2]Department of Electronics and Communication Engineering,Indian Institute of Information Technology,Allahabad,Uttar Pradesh 211015,India高影响力机构 出　　处：《Journal of Advanced Dielectrics》索引2018年第8卷第5期,共7页高影响力期刊 摘　　要：Difficulties in the fabrication of direct interface of ferroelectric BiFeO_(3)/HfO_(2) on the gate of ferroelectric field effect transistor(FeFET)is well known.This paper reports the optimization and fabrication of ferroelectric/dielectric(BiFeO_(3)/HfO_(2))gate stack for the FeFET applications.RF magnetron sputtering has been used for the deposition of BiFeO_(3),HfO_(2) films and their stack.X-Ray diffraction(XRD)analysis of BiFeO_(3) shows the dominant perovskite phase of(104),(110)orientation at 2θ=32°at the annealing temperature of 500℃.XRD analysis also confirms the amorphous nature of the HfO2 film at annealing temperature of 400℃,500℃ and 600℃.Multiple angle analysis shows the variation ion the refractive index between 2.98–3.0214 for BiFeO_(3) and 2.74–2.9 for the HfO2 film with the annealing temperature.Metal/Ferroelectric/Silicon(MFS),Metal/Ferroelectric/Metal(MFM),Metal/Insulator/Silicon(MIS),and Metal/Ferroelectric/Insulator/Silicon(MFIS)structures have been fabricated to obtain the electric characteristic of the ferroelectric,dielectric and their stacks.Electrical characteristics of the MFIS structure show the memory improvement from 2.7 V for MFS structure to 4.65 V for MFIS structure with 8 nm of buffer dielectric layer.This structure also shows the breakdown voltage of 40 V with data retention capacity greater than 9×10^(9)iteration cycles. 关 键 词：ENDURANCE FERROELECTRIC high-k dielectric memory window MFIS.
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