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Visible-light stimulated synaptic plasticity in amorphous indium−gallium−zinc oxide enabled by monocrystalline double perovskite for high-performance neuromorphic applications

查看全文 作　　者：Fu [1]Huang;Feier [1]Fang;Yue [1]Zheng;Qi [1]You;Henan [2]Li;Shaofan [1]Fang;Xiangna [1]Cong;Ke [1]Jiang;Ye [3]Wang;Cheng [1]Han;Wei [4,5,6]Chen;Yumeng [2]Shi 高影响力作者 机构地区：[1]International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education,Institute of Microscale Optoelectronics,Shenzhen University,Shenzhen 518060,China;[2]College of Electronics and Information Engineering,Shenzhen University,Shenzhen 518060,China;[3]Key Laboratory of Material Physics,Ministry of Education,School of Physics and Microelectronics,Zhengzhou University,Zhengzhou 450052,China;[4]Department of Physics,National University of Singapore,Singapore 117542,Singapore;[5]Department of Chemistry,National University of Singapore,Singapore 117543,Singapore;[6]Joint School of National University of Singapore and Tianjin University,International Campus of Tianjin University,Binhai New City,Fuzhou 350207,China高影响力机构 出　　处：《Nano Research》索引2023年第16卷第1期,共9页高影响力期刊 基　　金：Shi Y.M.and Han C.acknowledge the support from the National Natural Science Foundation of China(Nos.61874074 and 62004128);the Fundamental Research Foundation of Shenzhen(Nos.JCYJ20170817101100705 and JCYJ20190808152607389);the Key Project of Department of Education of Guangdong Province(No.2016KZDXM008);Li H.N.acknowledges the support from the Natural Science Foundation of SZU(No.2017011);the Science and Technology Project of Shenzhen(No.JCYJ20170817100111548);This research is supported by Singapore Ministry of Education under its AcRF Tier 2(No.MOE-T2EP50220-0001);the Shenzhen Peacock Plan(No.KQTD2016053112042971);the postgraduate innovation development fund project of Shenzhen University(No.315-0000470527). 摘　　要：Photoelectric synaptic devices have been considered as one of the key components in artificial neuromorphic systems due to their excellent capability to emulate the functions of visual neurons,such as light perception and image processing.Herein,we demonstrate an optically-stimulated artificial synapse with a clear photoresponse from ultraviolet to visible light,which is established on a novel heterostructure consisting of monocrystalline Cs2AgBiBr6 perovskite and indium–gallium–zinc oxide(IGZO)thin film.As compared with pure IGZO,the heterostructure significantly enhances the photoresponse and corresponding synaptic plasticity of the devices,which originate from the superior visible absorption of single-crystal Cs2AgBiBr6 and effective interfacial charge transfer from Cs2AgBiBr6 to IGZO.A variety of synaptic behaviors are realized on the fabricated thin-film transistors,including excitatory postsynaptic current,paired pulse facilitation,short-term,and long-term plasticity.Furthermore,an artificial neural network is simulated based on the photonic potentiation and electrical depression effects of synaptic devices,and an accuracy rate up to 83.8%±1.2%for pattern recognition is achieved.This finding promises a simple and efficient way to construct photoelectric synaptic devices with tunable spectrum for future neuromorphic applications. 关 键 词：artificial optoelectronic synapse monocrystalline Cs2AgBiBr6 thin-film transistors ultraviolet-to-visible neuromorphic computing
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