Growth mechanisms of interfacial carbides in solid-state reaction between single-crystal diamond and chromium

查看全文 作　　者：Zhuo [1]Liu;Wei [1]Cheng;Dekui [1]Mu;Qiaoli [2]Lin;Xipeng [1]Xu;Han [3]Huang 机构地区：[1]Institute of Manufacturing Engineering,Huaqiao University,Xiamen 361021,China;[2]School of Materials Science and Engineering,Lanzhou University of Technology,Lanzhou 730000,China;[3]School of Mechanical and Mining Engineering,The University of Queensland,Brisbane,QLD 4072,Australia 出　　处：《Journal of Materials Science & Technology》索引2023年第13期,共12页 基　　金：supported by the National Natural Science Foundation of China (No.51835004);the National Technology Development Project in Fujian province (No.2021L3012);funding support from Australia Research Council (ARC)through the Discovery Project Program (No.DP210102061). 摘　　要：Interfacial bonding is one of the most challenging issues in the fabrication,and hence comprehensively influences the properties of diamond-based metal matrix composites(MMCs)materials.In this work,solid-state(S/S)interface reaction between single-crystal synthetic diamond and chromium(Cr)metal was critically examined with special attention given to unveil the role of crystal orientation in the for-mation and growth of interfacial products.It has been revealed that catalytically converted carbon(CCC)was formed prior to chromium carbides,which is counterintuitive to previous studies.Cr 7 C 3 was the first carbide formed in the S/S interface reaction,aided by the relaxation of diamond lattices that re-duces the interfacial mismatch.Interfacial Cr 7 C 3 and Cr 3 C 2 carbides were formed at 600 and 800℃,respectively,with the growth preferred on diamond(100)plane,because of its higher density of surface defects than(111)plane.Interfacial strain distribution was quasi-quantitively measured using windowed Fourier Transform-Geometric Phase Analysis(WFT-GPA)analysis and an ameliorated strain concentration was found after the ripening of interfacial carbides.Textured morphologies of Cr_(3)C_(2) grown on diamond(100)and(111)planes were perceived after S/S interface reaction at 1000℃,which is reported for the first time.The underlying mechanisms of Cr-induced phase transformation on diamond surface,as well as the crystal orientation dependent growth of interfacial carbides were unveiled using the first-principles calculation.The formation and growth mechanisms of Cr_(3)C_(2) were elucidated using SEM,TEM and XRD analyses.Finally,an approach for tailoring the interfacial microstructure between synthetic diamond and bonding metals was proposed. 关 键 词：SOLID-STATE Interface reaction Synthetic diamond Phase transformation Chromium carbide