Two-Beam Ultrafast Laser Scribing of Graphene Patterns with 90-nm Subdiffraction Feature Size

查看全文 作　　者：Xi [1,2]Chen;Min [1,2]Gu

机构地区：[1]Institute of Photonic Chips University of Shanghaifor Science and Technology,Shanghai 200093,China;[2]Centre for Artificial-lntelligence Nanophotonics,Schoolof Optical-Electrical and Computer Engineering University of Shanghai for Science and Technology,Shanghai 200093,China

出　　处：《Ultrafast Science》索引2023年第3卷第1期,共9页

基　　金：supported by the National Natural Science Foundation of China(grant no.11974247);the Shanghai Science&Technology Commission(21DZ1100500);the Shanghai Municipal Science and Technology Major Project. 摘　　要：The fabrication of high-resolution laser-scribed graphene devices is crucial to achieving large surface areas and thus performance breakthroughs.However,since the investigation mainly focuses on the laser-induced reduction of graphene oxide,the single-beam scribing provides a tremendous challenge to realizing subdiffraction features of graphene patterns.Here,we present an innovative 2-beam laser scribing pathway for the fabrication of subdiffraction graphene patterns.First,an oxidation reaction of highly reduced graphene oxide can be controllably driven by irradiation of a 532-nm femtosecond laser beam.Based on the oxidation mechanism,a 2-beam laser scribing was performed on graphene oxide thin films,in which a doughnut-shaped 375-nm beam reduces graphene oxide and a spherical 532-nm ultrafast beam induces the oxidation of laser-reduced graphene oxide.The spherical beam turns the highly reduced graphene oxide(reduced by the doughnut-shaped beam)to an oxidized state,splitting the laser-scribed graphene oxide line into 2 subdiffraction featured segments and thus forming a laserscribed graphene/oxidized laser-scribed graphene/laser-scribed graphene line.Through the adjustment of the oxidation beam power,the minimum linewidth of laser-scribed graphene was measured to be 90 nm.Next,we fabricated patterned supercapacitor electrodes containing parallel laser-scribed graphene lines with subdiffraction widths and spacings.An outstanding gravimetric capacitance of 308 F/g,which is substantially higher than those of reported graphene-based supercapacitors,has been delivered.The results offer a broadly accessible strategy for the fabrication of high-performance graphene-based devices including high-capacity energy storage,high-resolution holograms,high-sensitivity sensors,triboelectric nanogenerators with high power densities,and artificial intelligence devices with high neuron densities. 关键词：DIFFRACTION OXIDIZED SHAPED

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Two-Beam Ultrafast Laser Scribing of Graphene Patterns with 90-nm Subdiffraction Feature Size

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