Comparison of neutron irradiation effects on the electrical performances of SiGe HBT and SiBJT

查看全文 作　　者：[1]MENGXiangti;[2]WANGRuipian;[2]KANGAiguo;[2]WANGJilin;[2]JIAHongyong;[2]CHENPe

机构地区：[1]InstituteofMicroelectronics,TsinghuaUniversity,Beijing100084,China;[2]InstituteofNuclearEnergyTechnology,TsinghuaUniversity,Beijing100084,China

出　　处：《Rare Metals》索引2003年第22卷第1期,共6页

基　　金：ThisprojectisfinanciallysupportedbytheNationalNaturalScienceFoundationofChina(No.10075029) 摘　　要：The change of electrical performances of silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) andSi bipolar junction transistor (BJT) was studied as a fumction of reactor fast neutron radiation fluence. After neutron irradia-tion, the collector current Ic and the current gain β decrease, and the base current Ib increases generally for SiGe HBT. Thehigher the neuron irradiation fluence is, the larger Ib increases. For conventional Si BJT, Ic and Ib increase as wellas β decreases much larger than SiGe HBT at the same fluence. It is shown that SiGe HBT has a larger anti-radiationthreshold and better anti-radiation perrormance than Si BJT. The mechanism of performance changes induced by irradiationwas preliminarily discussed. 关键词：晶体管 HBT BJT 中子辐照电性能

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Comparison of neutron irradiation effects on the electrical performances of SiGe HBT and SiBJT

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