Dark output characteristic of γ-ray irradiated CMOS digital image sensors

查看全文 作　　者：MENG Xiangti and KANG A iguo Institute of Nuclear Energy Technology, Tsinghua University, Beijing 100084, China

出　　处：《Rare Metals》索引2002年第21卷第1期,共6页

基　　金：the National Natural Science Foundation of China (No.10075029). 摘　　要：The quality of dark output images from the CMOS (complementary metal oxide semiconductor) black and white (B&W) digital image sensors captured before and after y-ray irradiation was studied. The characteristic parameters of the dark output images captured at different radiation dose, e.g. average brightness and its non-uniformity of dark output images, were analyzed by our test software. The primary explanation for the change of the parameters with the radiation dose was given. 关键词：CMOS数字图象传感器 Γ射线照射硅图象质量 CCD

相关文献

参考文献（10）
引证文献（5）
耦合文献（4）

参考文献(10)

引证文献(5)

耦合文献(4)

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费

Dark output characteristic of γ-ray irradiated CMOS digital image sensors

参考文献(10)

引证文献(5)

耦合文献(4)

用户提示