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| 1 | 5-5 Development of 33 Grid Silicon Detector显示文摘Silicon detectors have been widely used in high energy, astrophysics and nuclear medicine due to their perfectposition resolution and energy resolution, wide linear range and quicke response time[1;2]. They are also used asvertex detectors and track detectors in the world nuclear physics laboratories[3]. Ion-implanted silicon decetors suchas strip decetors and have been used in experiment. A pisition-sensitive decetor, that is 33 grid silicon deterctor,is further developed for experiment purpose. It is shown in Fig. 1, which is made of nine 10 mm10 mm squaresilicons pads. | Li Zhankui Li Ronghua Li Haixia Liu Fengqiong Chen Cuihong Rong Xinjuan Wang Xiuhua Li Chunyan Zu Kailing Lu Ziwei Wang Zhusheng | 2014 | IMP & HIRFL Annual Report2014，，1： | 0 |
| 2 | 5-8 Study of Non-ionizing Energy Loss in Silicon Detectors显示文摘Many studies have demonstrated that the degradation of silicon detector properties in a radiation field is linearlycorrelated to the displacement damage energy[1] induced by the non-ionizing energy loss (NIEL). It has been pointedoutthat NIEL can be incorporated into Monte Carlo transport codes to estimate the displacement damage effects[2].Fig. 1 shows the results of a SRIM simulation for 10 MeV protons injected on a double-sided silicon micro-stripdetector. It can be clearly seen that more than 95% of the energy loss can be ascribed to ionizing energy loss, whichprovides energy to excite or ionize extra nuclear electrons to generate electron-hole pairs when incident particlestraverse the detector and collide with lattice atoms. Less than 5% of energy loss is non-ionizing energy loss whichinduces lattice atom displacement damage or transforms into phonons to participate in the crystal lattice vibration. | Li Ronghua Li Zhankui Li Haixia Liu Fengqiong Chen Cuihong Rong Xinjuan Wang Xiuhua Li Chunyan Zu Kailing Lu Ziwei Wang Zhusheng | 2014 | IMP & HIRFL Annual Report2014，，1： | 0 |
| 3 | 5-9 Application of Strati ed Implantation for Silicon Micro-strip Detectors显示文摘The silicon micro-strip detector was fabricated by MEMS (Micro Electro Mechanical Systems) techniques[1].According to the application requirement and the process parameters, a large amount of B+ ions at 40 keV and1.51014 ions/cm2 have been implanted into the wafers. It is found that more than 50% of the micro strips cannotform a functional P-N junction. Based on the suggestion of simulation results, the process of stratified implantationwas then applied with the following procedures. B+ ions were firstly implanted into the wafer at 40 keV, 21014ions/cm2, and then sequentially implanted at 20 keV, 21014 ions/cm2 into the same wafers. Preliminary testresults show that over 95% of the silicon micro-strips in this batch have a perfect P-N junction with a reverse bodyresistance larger than 500 MΩcm. The energy resolution for 5.156 MeV particles of 239Pu source is about 0.8%or even less, as shown in Fig. 1. The structure of the detectors is therefore definitely different from the designeddevices (Fig. 2(a)) shown in Fig. 1, which is more like a P-P+-N structure as shown in Fig. 2(b). | Li Haixia Li Zhankui Li Ronghua Chen Cuihong Wang Xiuhua Rong Xinjuan Liu Fengqiong Wang Zhusheng Li Chunyan Zu Kailing Lu Ziwei | 2014 | IMP & HIRFL Annual Report2014，，1： | 0 |
| 4 | The molecular characteristics of soybean ARR-B transcription factors显示文摘The Type-B authentic response regulator(ARR-Bs)gene family is one of the important plant-specific transcription factor families involved in variety of physiological processes.However,study of ARR-Bs gene family in soybean is limited.Genome-wide analysis and expression profiling of the ARR-Bs gene family were performed in the soybean genome.31 ARR-Bs genes(namely GmARR-B1-31)were identified,containing conserved catalytic domains with protein lengths and molecular weights ranging from 246 to 699 amino acids(aa)and 28.30 to 76.86 kDa,respectively.Phylogenetic analysis grouped ARR-Bs genes into three clusters—Cluster I,Cluster II,and Cluster III—which included 15,12,and 4 genes,respectively,and were asymmetrically distributed on 17 chromosomes.Tissue specific expression analysis of GmARR-Bs family revealed a high transcription level in flowers,roots and seeds.The subcellular localization of GmARR5,GmARR14 were observed in the nucleus,and the promoter region of them included low-temperature responsive element(LTR),the C-repeat/dehydration responsive element(DRE),MBS,ABRE,MYB,MEJA and TCA-elements,which possibly participate in abiotic stress and hormones responses.qRTPCR analysis showed that the expression of GmARR-B genes were affected by different abiotic stresses,especially cold stress and salt stress,and GmARR-B5 and GmARR-B14 were significantly induced by cold stress.This suggested that ARR-Bs genes were involved in multiple abiotic stress response pathways and acted as a positive factor under cold stress. | HE LI RUNAN CHEN ZHONGCHENG CHEN JIAXIN LIN XIJUN JIN CHUNYUAN REN QIUSEN CHEN FENGQIONG CHEN GAOBO YU YUXIAN ZHANG | 2022 | BIOCELL2022，46，6： | 0 |
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