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| 1 | A 10×10 deep ultraviolet light-emitting micro-LED array显示文摘In this work,we design and fabricate a deep ultraviolet(DUV)light-emitting array consisting of 10×10 micro-LEDs(μ-LEDs)with each device having 20μm in diameter.Strikingly,the array demonstrates a significant enhancement of total light output power by nearly 52%at the injection current of 100 mA,in comparison to a conventional large LED chip whose emitting area is the same as the array.A much higher(~22%)peak external quantum efficiency,as well as a smaller efficiency droop forμ-LED array,was also achieved.The numerical calculation reveals that the performance boost can be attributed to the higher light extraction efficiency at the edge of eachμ-LED.Additionally,the far-field pattern measurement shows that theμ-LED array possesses a better forward directionality of emission.These findings shed light on the enhancement of the DUV LEDs performance and provide new insights in controlling the light behavior of theμ-LEDs. | Huabin Yu Muhammad Hunain Memon Hongfeng Jia Haochen Zhang Meng Tian Shi Fang Danhao Wang Yang Kang Shudan Xiao Shibing Long Haiding Sun | 2022 | Journal of Semiconductors2022，43，6： | 3 |
| 2 | Tapering-induced enhancement of light extraction efficiency of nanowire deep ultraviolet LED by theoretical simulations显示文摘A nanowire(NW) structure provides an alternative scheme for deep ultraviolet light emitting diodes(DUV-LEDs)that promises high material quality and better light extraction efficiency(LEE). In this report, we investigate the influence of the tapering angle of closely packed Al Ga N NWs, which is found to exist naturally in molecular beam epitaxy(MBE) grown NW structures, on the LEE of NW DUV-LEDs. It is observed that, by having a small tapering angle, the vertical extraction is greatly enhanced for both transverse magnetic(TM) and transverse electric(TE) polarizations. Most notably, the vertical extraction of TM emission increased from 4.8% to 24.3%,which makes the LEE reasonably large to achieve high-performance DUV-LEDs. This is because the breaking of symmetry in the vertical direction changes the propagation of the light significantly to allow more coupling into radiation modes. Finally, we introduce errors to the NW positions to show the advantages of the tapered NW structures can be projected to random closely packed NW arrays. The results obtained in this paper can provide guidelines for designing efficient NW DUV-LEDs. | RONGHUI LIN SERGIO VALDES GALAN HAIDING SUN YANGRUI HU MOHD SHARIZAL ALIAS BILAL JANJUA TIEN KHEE NG BOON S.OOI XIAOHANG LI | 2018 | Photonics Research2018，6，5： | 3 |
| 3 | Advanced RF filters for wireless communications显示文摘This paper provides a comprehensive review of advanced radio fre-quency(RF)filter technologies available in miniature chip or inte-grated circuit(IC)form for wireless communication applications.The RF filter technologies were organized according to the time-line of their introduction,in conjunction with each generation of wireless(cellular)communication standards(1G to 5G).This ap-proach enabled a clear explanation of the corresponding invention history,working principles,typical applications and future develop-ment trends.The article covered commercially successful acoustic filter technologies,including the widely used surface acoustic wave(SAW)and bulk acoustic wave(BAW)filters,as well as electromag-netic filter technologies based on low-temperature co-fired ceramic(LTCC)and integrated passive device(IPD).Additionally,emerg-ing filter technologies such as IHP-SAW,suspended thin-film lithium niobate(LiNbO3 or LN)resonant devices and hybrid were also dis-cussed.In order to achieve higher performance,smaller form factor and lower cost for the wireless communication industry,it is believed that fundamental breakthroughs in materials and fabrication tech-niques are necessary for the future development of RF filters. | Kai Yang Chenggong He Jiming Fang Xinhui Cui Haiding Sun Yansong Yang Chengjie Zuo | 2023 | Chip2023，2，4： | 0 |
| 4 | Boosted high-temperature electrical characteristics of AlGaN/GaN HEMTs with rationally designed compositionally graded AlGaN back barriers显示文摘Wide bandgap GaN-based HEMTs have shown great potential as key components in various power electronic systems but still face challenges in the pursuit of devices with stable operation capability especially in harsh environments.Here,we report a high-performance double heterojunction(DH)based AlGaN/GaN HEMT by incorporating a decreasing-Al-composition(DAC)graded AlGaN back barrier(BB)beneath the GaN channel.Thanks to the improved electron confinement enabled by graded BB,the DHHEMT exhibits significantly improved on-state drain current density and off-state breakdown voltage compared with a single heterojunction(SH)based HEMT.More intriguingly,with an additional Si Nx passivation layer,the surface states of the DH-HEMTs can be effectively suppressed,leading to an almost constant offstate leakage current and negligible gate contact degradation across the temperature range from 25℃to 150℃.These results highlight the superiority and reliability of the proposed graded AlGaN BB to boost device characteristics for applications under high temperatures and harsh conditions. | Haochen ZHANG Yue SUN Kunpeng HU Lei YANG Kun LIANG Zhanyong XING Hu WANG Mingshuo ZHANG Huabin YU Shi FANG Yang KANG Haiding SUN | 2023 | Science China(Information Sciences)2023，66，8： | 0 |
| 5 | Observation of polarity-switchable photoconductivity in lInitride/MoS_(x)core-shell nanowires显示文摘Ⅱ-Ⅴsemiconductor nanowires are indispensable building blocks for nanoscale electronic and optoelectronic devices.However,solely relying on their intrinsic physical and material properties sometimes limits device functionalities to meet the increasing demands in versatile and complex electronic world.By leveraging the distinctive nature of the one-dimensional geometry and large surface-to-volume ratio of the nanowires,new properties can be attained through monolithic integration of conventional nanowires with other easy-synthesized functional materials.Herein,we combine high-crystal-quality lInitridle nanowires with amorphous molybdenum sulfides(a-MoS)to construct II.nitride/a-MoS_(x) core-shell nanostructures.Upon light ilumination,such nanostructures exhibit striking spectrally distinctive photodetection characteristic in photoelectrochemical environment,demonstrating a negative photoresponsivity of-100.42 mA W^(-1)under 254 nm ilumination,and a positive photoresponsivity of 29.5 mA W^(-1)under 365 nm ilumination.Density functional theory calculations reveal that the successful surface modifcation of the nanowires via a-MoS_(x)decoration accelerates the reaction process at the electrolyte/nanowire interface,leading to the generation of opposite photocurrent signals under different photon ilumination.Most importantly,such polarity-switchable photoconductivity can be further tuned for multiple wavelength bands photodetection by simply adjusting the surrounding environment and/or tailoring the nanowire composition,showing great promise to build light-wavelength controllable sensing devices in the future. | Danhao Wang Wentiao Wu Shi Fang Yang Kang Xiaoning Wang Wei Hu Huabin Yu Haochen Zhang Xin Lu Yuanmin Luo Jr-Hau He Lan Fu Shibing Long Sheng Liu Haiding Sun | 2022 | Light(Science & Applications)2022，11，11： | 0 |
| 6 | 利用微孔板测序技术绘制小鼠细胞图谱显示文摘文章简介长久以来,生命科学的研究主要基于群体细胞水平的分析,近几年所涌现的单细胞组学技术,使我们能够从单个细胞的水平上更为精确的解析细胞的分化、再生、衰老以及病变。在本研究中,科研团队自主开发了一套完全国产化的Microwell-seq高通量单细胞测序平台. | Xiaoping Han Renying Wang Yincong Zhou Lijiang Fei Huiyu Sun Shujing Lai Assieh Saadatpour Ziming Zhou Haide Chen Fang Ye Daosheng Huang Yang Xu Wentao Huang Mengmeng Jiang Xinyi Jiang Jie Mao Yao Chen Chenyu Lu Jin Xie Qun Fang Yibin Wang Rui Yue Tiefeng Li He Huang Stuart H.Orkin Guo-Cheng Yuan Ming Chen 郭国骥 | 2019 | 科学新闻2019，0，2： | 0 |
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