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| 1 | A comparison of transmittance properties between ZnO∶Al films for transparent conductors for solar cells deposited by sputtering of AZO and cosputtering of AZO/ZnO显示文摘Aluminum-doped zinc oxide (AZO) thin films were deposited on sapphire (002) and glass substrates by two different sputtering techniques radio frequency magnetron cosputtering of AZO and ZnO targets and sputtering of an AZO target. The dependence of the photoluminescence (PL) and transmittance properties of the AZO films deposited by cosputtering and sputtering on the AZO/ZnO target power ratio, R and the O2/Ar flow ratio, r were investigated, respectively. Only a deep level emission peak appears in the PL spectra of cosputtered AZO films whereas both UV emission and deep level emission peaks are observed in the PL spectra of sputtered AZO films. The absorption edges in the transmittance spectra of the AZO films shift to the lower wavelength region as R and r increase. Effects of crystallinity, surface roughness, PL on the transmittance of the AZO films were also explained using the X-ray diffraction (XRD), atomic force microscopy (AFM), and PL analysis results. | LEE Chongmu YIM Keunbin CHO Youngjoon Lee J.G. | 2006 | Rare Metals2006，25，z1： | 8 |
| 2 | Room temperature hydrogen sensing performances of multiple networked Ga N nanowire sensors codecorated with Au and Pt nanoparticles显示文摘The sensing performances of multiple networked Ga N nanowire(NW) sensor codecorated with Au and Pt nanoparticles were examined. The pristine Ga N nanowires show responses of approximately 108%-173% to 0.05%-0.25% H2 at room temperature. On the other hand, the Ga N nanowires decorated with Au and those decorated with Pt lead to 1.1-1.3 and 1.2-1.6 times,respectively, stronger responses to 0.05%-0.25% H2. In contrast, the Au Pt-codecorated Ga N nanowires show 1.3-2.0 times stronger responses to 0.05%-0.25% H2. In other words, the Ga N nanorods codecorated with Au and Pt nanoparticles show much stronger response to H2 gas than the Au or Pt monometal-decorated counterpart. The underlying mechanism for the enhanced response of the Au Pt-codecorated Ga N nanowire was discussed. | PARK Sunghoon KIM Soohyun PARK Suyoung LEE Sangmin LEE Chongmu | 2015 | Journal of Central South University2015，22，5： | 2 |
| 3 | Growth of nitrogen-doped p-type ZnO thin films prepared by atomic layer epitaxy显示文摘Nitrogen-doped, p-type ZnO thin films were grown successfully on sapphire (0001) substrates by using atomic layer epitaxy (ALE). Zn(C2H5)2 [Diethylzinc, DEZn], H2O and NH3 were used as a zinc precursor, an oxidant and a doping source gas, respectively. The lowest electrical resistivity of the p-type ZnO films grown by ALE and annealed at 1000 ℃ in an oxygen atmosphere for 1 h was 18.3 Ω·cm with a hole concentration of 3.71×1017 cm-3. Low temperature-photoluminescence analysis and time-dependent Hall measurement results support that the nitrogen-doped ZnO after annealing is a p-type semiconductor. | LEE Chongmu LIM Jongmin PARK Suyoung KIM Hyounwoo | 2006 | Rare Metals2006，25，z1： | 2 |
| 4 | A theoretical approach for the thermal expansion behavior of the particulate reinforced aluminum matrix composite Part I A thermal expansion model for composites with mono-dispersed spherical particles显示文摘 | Chong-Sung Park Myung-Ho Kim Chongmu Lee | 2001 | Journal of Materials Science2001，，14： | 1 |
| 5 | Ta-Si-N as a diffusion barrier between Cu and Si显示文摘 | Chongmu Lee Young-Hoon Shin | 1998 | Mater Chem Phys1998，57，： | 1 |
| 6 | Hardness and adhesion properties of HfN/Si3 N4 and NbN/Si3 N4 multilayer coatings 显示文摘 | Jin Jung Jeong Sun Keun Hwang Chongmu Lee | 2002 | Materials Chemistry and Physics2002，77，： | 1 |
| 7 | Evaluation of Ti-Si-N as a diffusion barrier between copper and silicon 显示文摘 | Jin-Tae No Jun-Hwan O Chongmu Lee | 2000 | Mater Chem Phys2000，63，： | 1 |
| 8 | Enhanced ethanol sensing properties of TiO 2 nanotube sensors显示文摘 | Youngjae Kwon Hyunsu Kim Sangmin Lee In-Joo Chin Tae-Yeon Seong Wan In Lee Chongmu Lee | 2012 | Sensors & Actuators: B Chemical2012，，： | 1 |
| 9 | IZO/Al/GZO multilayer films to replace ITO films显示文摘 | Chongmu Lee R. P. Dwivedi Wangwoo Lee Chanseok Hong Wan In Lee Hyoun Woo Kim | 2008 | Journal of Materials Science: Materials in Electronics2008，，10： | 1 |
| 10 | Ta-Si-N as a diffusion barrier between Cu and Si显示文摘 | Lee Chongmu Shin Young-Hoon | 1998 | Mater Chem Phys1998，57，： | 1 |
| 11 | Dry cleaning for metallic contaminants removal as the second cleaning process after the CMP process显示文摘 | Jong-Min Lim Bu-yong Jeon Chongmu Lee | 2001 | Materials Chemistry and Physics2001，70，： | 1 |
| 12 | Growth of SnO 2 nanowires by thermal evaporation on Au-coated Si substrates显示文摘 | Sunghoon Park Chanseok Hong Jungwoo Kang Namhee Cho Chongmu Lee | 2009 | Current Applied Physics2009，，3： | 1 |
| 13 | Growth of ZnO thin films by using an atomic layer epitaxy technique and NH3 as a doping source显示文摘 | LEE CHONGMU PARK SUYOUNG LLM JONQMIN | 2007 | Materials letters2007，61，1112： | 1 |
| 14 | Amorphous gallium oxide nanowires synthesized by metalorganic chemical vapor deposition显示文摘 | Nam Ho Kim Hyoun Woo Kim Chang Seoul Chongmu Lee | 2004 | Materials Science & Engineering B2004，，2： | 1 |
| 15 | Temperature-controlled synthesis of Zn 2 GeO 4 nanowires in a vapor–liquid–solid mode and their photoluminescence properties显示文摘 | Hyoun Woo Kim Han Gil Na Ju Chan Yang Chongmu Lee | 2011 | Chemical Engineering Journal2011，，3： | 1 |
| 16 | Hardness and adhesion properties of HfN/Si3N4 and NbN/Si3N4 multilayer coatings显示文摘 | Jin Jung Jeong Sun Keun Hwang Chongmu Lee | 2002 | Materials Chemistry and Physics2002，77，： | 1 |
| 17 | Structural and electrical properties of porous silicon with rf-sputtered Cu films显示文摘 | Ansari Z A Hong Kwangpyo Lee Chongmu | 2002 | Materials Science and Engineering B2002，90，1： | 1 |
| 18 | Evaluation of Ti-Si-N as a diffusion barrier between copper and silicon显示文摘 | No Jin Tae O Jun Hwan Lee Chongmu | 2000 | Material Chemistry and Physics2000，63，： | 1 |
| 19 | A theoretical approach for the thermal expansion behavior of the particulate reinforced aluminum matrix composite Part I A thermal expansion model for composites with mono-dispersed spherical particles显示文摘 | Chong-Sung Park Myung-Ho Kim Chongmu Lee | 2001 | Journal of Materials Science2001，，14： | 1 |
| 20 | Electrical Properties of Sputter-deposited ZrO2-based Pt/ZrO_2/Si Capacitors显示文摘在 ZrO_2 被无线电扔的地方, Pt/ZrO_2/Si 三明治组织频率( r.f )磁控管在 O_2/Ar 煤气的混合的气氛用一个 Zr 目标劈啪作响,被制作, O_2/Ar 的效果流动在反应劈啪作响过程的比率,退火的温度,结构上的 ZrO_2 电影厚度, ZrO_2films 的表面粗糙和 Pt/ZrO_2/Si metal-oxide-semiconductor (瞬间)的电的性质电容器我们 reinvestigated 。 Pt/ZrO_2/Si 电容器的最佳进程参数以电容被最大化的如此的一个方法和漏泄电流基于 reactivelysputtered-ZrO_2 决定那是 1.5 的 O_2/Ar 流动比率,氧化物收费,并且接口陷井密度被最小化, 800 deg C 的退火的温度,并且 10 nm 的电影厚度。另外,在 Pt/ZrO_2/Si 电容器的传导机制被讨论了。 | Keunbin YIM Yeonkyu PARK Anna PARK Namhee CHO Chongmu LEE | 2006 | Journal of Materials Science & Technology2006，22，6： | 0 |
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