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| 1 | Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si显示文摘Current laser-based display and lighting applications are invariably using blue laser diodes(LDs)grown on freestanding GaN substrates,which are costly and smaller in size compared with other substrate materials.1–3 Utilizing less expensive and large-diameter Si substrates for hetero-epitaxial growth of indium gallium nitride/gallium nitride(InGaN/GaN)multiple quantum well(MQW)structure can substantially reduce the cost of blue LDs and boost their applications.To obtain a high crystalline quality crack-free GaN thin film on Si for the subsequent growth of a blue laser structure,a hand-shaking structure was formed by inserting Al-composition step down-graded AlN/AlxGa1−xN buffer layers between GaN and Si substrate.Thermal degradation in InGaN/GaN blue MQWs was successfully suppressed with indium-rich clusters eliminated by introducing hydrogen during the growth of GaN quantum barriers(QBs)and lowering the growth temperature for the p-type AlGaN/GaN superlattice optical cladding layer.A continuous-wave(CW)electrically pumped InGaN/GaN quantum well(QW)blue(450 nm)LD grown on Si was successfully demonstrated at room temperature(RT)with a threshold current density of 7.8 kA/cm^(2). | Yi Sun Kun Zhou Meixin Feng Zengcheng Li Yu Zhou Qian Sun Jianping Liu Liqun Zhang Deyao Li Xiaojuan Sun Dabing Li Shuming Zhang Masao Ikeda Hui Yang | 2018 | Light(Science & Applications)2018，7，1： | 5 |
| 2 | Honokiol: an effective inhibitor of tumor necrosis factor-α-induced up-regulation of inflammatory cytokine and chemokine production in human synovial fibroblasts显示文摘在这研究,我们调查了在肿瘤坏死因素(TNF ) 位于 honokiol 的反煽动性的效果下面的机制 -- 刺激风湿性关节炎 synovial 成纤维细胞(RASF ) 。RASF 与 honokiol (020 M ) 预先对待与 TNF-(20 ng/ml ) 被刺激。前列腺素 E2 ( PGE2 )的层次,氮的氧化物(没有),可溶的细胞间的粘附 molecule-1 ( sICAM-1 ),转变生长 factor-1 ( TGF-1 ),单核白血球趋化性的 protein-1 ( MCP-1 ),并且巨噬细胞在上层清液的煽动性的 protein-1 ( MIP-1 )被连接酶的 immunosorbent 试金( ELISA )和 Griess 试金决定。另外, cyclooxygenase-2 (COX-2 ) 的蛋白质表示层次,可诱导的氮的氧化物 synthase (iNOS ) ,和 phosphorylated Akt,原子因素 kappa B (NFB ) ,和细胞外的调整信号的 kinase (英皇家空军之阶级最低之兵) 1/2 被西方的污点决定。NFBp65 的表示被 immunocytochemical 分析估计。TNF- 处理显著地起来调整 PGE2 的层次,不在 RASF 的上层清液的 sICAM-1, TGF-1, MCP-1,和 MIP-1,在 RASF 增加了 Akt, IB- , NFB,和 ERK1/2 的 COX-2, iNOS,和导致的 phosphorylation 的蛋白质表示。TNF -- 这些分子的导致的表示被预告的处理与 honokiol 以一种剂量依赖者方式禁止。在 NFBp65 活动的 honokiol 的禁止的效果被 immunocytochemical 分析也证实。在结论, honokiol 是 TNF 的一个潜在的禁止者 -- 在 RASF 导致了煽动性的因素的表示,抓住作为潜在的反煽动性的药答应它。 | Jie Li Xueting Shao Lijuan Wu Tingting Feng Changzhong Jin Meixin Fang Nanping Wu Hangping Yao | 2011 | Acta Biochimica et Biophysica Sinica2011，43，5： | 4 |
| 3 | A wireless, implantable optoelectrochemical probe for optogenetic stimulation and dopamine detection显示文摘Physical and chemical technologies have been continuously progressing advances in neuroscience research.The development of research tools for closed-loop control and monitoring neural activities in behaving animals is highly desirable.In this paper,we introduce a wirelessly operated,miniaturized microprobe system for optical interrogation and neurochemical sensing in the deep brain.Via epitaxial liftoff and transfer printing,microscale light-emitting diodes(micro-LEDs)as light sources and poly(3,4-ethylenedioxythiophene)polystyrene sulfonate(PEDOT:PSS)-coated diamond films as electrochemical sensors are vertically assembled to form implantable optoelectrochemical probes for real-time optogenetic stimulation and dopamine detection capabilities.A customized,lightweight circuit module is employed for untethered,remote signal control,and data acquisition.After the probe is injected into the ventral tegmental area(VTA)of freely behaving mice,in vivo experiments clearly demonstrate the utilities of the multifunctional optoelectrochemical microprobe system for optogenetic interference of place preferences and detection of dopamine release.The presented options for material and device integrations provide a practical route to simultaneous optical control and electrochemical sensing of complex nervous systems. | Changbo Liu Yu Zhao Xue Cai Yang Xie Taoyi Wang Dali Cheng Lizhu Li Rongfeng Li Yuping Deng He Ding Guoqing Lv Guanlei Zhao Lei Liu Guisheng Zou Meixin Feng Qian Sun Lan Yin Xing Sheng | 2020 | Microsystems & Nanoengineering2020，6，1： | 3 |
| 4 | Al-free cladding-layer blue laser diodes with a low aspect ratio in far-field beam pattern显示文摘c-plane GaN-based blue laser diodes(LDs) were fabricated with Al-free cladding layers(CLs) and deepened etching depth of mesa structure, so the aspect ratio of the far-field pattern(FFP) of the laser beam can be reduced to as low as 1.7, which is nearly the same as conventional AlGa In P-based red LDs. By using GaN CLs,the radiation angle of the laser beam θ⊥ is only 10.1° in the direction perpendicular to the junction plane. After forming a deeply etched mesa, the beam divergence angle parallel to the junction plane of FFP, θ_(//), increases from4.9° to 5.8°. After using the modified structure, the operation voltage of LD is effectively reduced by 2 V at an injection current of 50 mA, but the threshold current value increases. The etching damage may be one of the main reasons responsible for the increase of the threshold current. | Meixin Feng Qian Sun Jianping Liu Zengcheng Li Yu Zhou Hongwei Gao Shuming Zhang Hui Yang | 2018 | Journal of Semiconductors2018，39，8： | 1 |
| 5 | Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes显示文摘A method to calculate the reflectivity of the coated cavity facet was proposed, and the distribution of the optical power near the two coated cavity facets was calculated for GaN-based laser diodes. A new design method for reducing the optical power at the two cavity facets without changing the output power of laser diodes was discussed, which is helpful to optimize the cavity facet coating and raise the threshold current at which catastrophic optical damage occurs. | FENG MeiXin ZHANG ShuMing JIANG DeSheng WANG Hui LIU JianPing ZENG Chang LI ZengCheng WANG HuaiBing WANG Feng YANG Hui | 2012 | Science China(Technological Sciences)2012，55，4： | 1 |
| 6 | GaN-based ultraviolet microdisk laser diode grown on Si显示文摘This work reports a demonstration of electrically injected GaN-based near-ultraviolet microdisk laser diodes with a lasing wavelength of 386.3 nm at room temperature. The crack-free laser structure was epitaxially grown on Si substrates using an Al-composed down-graded Al N/AlGaN multilayer buffer to mitigate the mismatches in the lattice constant and coefficient of thermal expansion, and processed into “sandwich-like” microdisk structures with a radius of 12 μm. Air-bridge electrodes were successfully fabricated to enable the device electrical characterization. The electrically pumped lasing of the as-fabricated microdisk laser diodes was evidenced by the rapid narrowing down of electroluminescence spectra and dramatic increase in the light output power, as the current exceeded the threshold of 248 mA. | JIN WANG MEIXIN FENG RUI ZHOU QIAN SUN JIANXUN LIU YINGNAN HUANG YU ZHOU HONGWEI GAO XINHE ZHENG MASAO IKEDA HUI YANG | 2019 | Photonics Research2019，7，6： | 0 |
| 7 | Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet显示文摘We have fabricated InGaN-based superluminescent diodes(SLDs)with one-sided oblique facet.The characteristics of the SLDs and laser diodes with the same cavity length(800 lm)were compared.The typical peak wavelength and the full width at half maximum of the spectrum in superluminescence regime are 445.3 and 7.7 nm for the SLDs with 800 lm cavity length.The characteristics of the SLDs with different cavity length were also demonstrated in a comparative way.It is found that the gain of the InGaN multi-quantum wells in blue spectral range is a linear function of the current density below gain saturation region.The lasing threshold current turns out to be higher for the shorter SLD(S-SLD)(400 lm),but the output light intensity of the longer SLD(800 lm)is higher than that of the S-SLD under the same current density.The gain saturation phenomenon was observed in S-SLD when it was biased at a current density larger than 27.5 kA/cm2.The increase of junction temperature was identified as the main reason for gain saturation through spectra analysis. | Chang Zeng Shuming Zhang Jianping Liu Deyao Li Desheng Jiang Meixin Feng Zengcheng Li Kun Zhou Feng Wang Huaibing Wang Hui Wang Hui Yang | 2014 | Chinese Science Bulletin2014，59，16： | 0 |
| 8 | Lipid metabolism dysfunction induced by age-dependent DNA methylation accelerates aging显示文摘Epigenetic alterations and metabolic dysfunction are two hallmarks of aging.However,the mechanism of how their interaction regulates aging,particularly in mammals,remains largely unknown.Here we show ELOVL fatty acid elongase 2(Elovl2),a gene whose epigenetic alterations are most highly correlated with age prediction,contributes to aging by regulating lipid metabolism.We applied artificial intelligence to predict the protein structure of ELOVL2 and the interaction with its substrate.Impaired Elovl2 function disturbs lipid synthesis with increased endoplasmic reticulum stress and mitochondrial dysfunction,leading to key aging phenotypes at both cellular and physiological level.Furthermore,restoration of mitochondrial activity can rescue age-related macular degeneration(AMD)phenotypes induced by Elovl2 deficiency in human retinal pigmental epithelial(RPE)cells;this indicates a conservative mechanism in both human and mouse.Taken together,we revealed an epigenetic-metabolism axis contributing to aging and illustrate the power of an AI-based approach in structure-function studies. | Xin Li Jiaqiang Wang LeYun Wang Yuanxu Gao Guihai Feng Gen Li Jun Zou Meixin Yu Yu Fei Li Chao Liu Xue Wei Yuan Ling Zhao Hong Ouyang Jian-Kang Zhu Wei Li Qi Zhou Kang Zhang | 2022 | Signal Transduction and Targeted Therapy2022，7，6： | 0 |
| 9 | Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure显示文摘This work reports the fabrication of via-thin-film light-emitting diode(via-TF-LED)to improve the light output power(LOP)of blue/white Ga N-based LEDs grown on Si(111)substrates.The as-fabricated via-TF-LEDs were featured with a roughened n-GaN surface and the p-GaN surface bonded to a wafer carrier with a silver-based reflective electrode,together with an array of embedded n-type via pillar metal contact from the p-Ga N surface etched through the multiple-quantum-wells(MQWs)into the n-Ga N layer.When operated at 350 m A,the via-TF-LED gave an enhanced blue LOP by 7.8%and over 3.5 times as compared to the vertical thin-film LED(TF-LED)and the conventional lateral structure LED(LS-LED).After covering with yellow phosphor that converts some blue photons into yellow light,the via-TF-LED emitted an enhanced white luminous flux by 13.5%and over 5times,as compared with the white TF-LED and the white LS-LED,respectively.The significant LOP improvement of the via-TF-LED was attributed to the elimination of light absorption by the Si(111)epitaxial substrate and the finger-like n-electrodes on the roughened emitting surface. | Zengcheng LI Bo Feng Biao Deng Legong Liu Yingnan Huang Meixin Feng Yu Zhou Hanmin Zhao Qian Sun Huaibing Wang Xiaoli Yang Hui Yang | 2018 | Journal of Semiconductors2018，39，4： | 0 |
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