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| 1 | A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness显示文摘GaN-based HEMTs have significant advantages,making them a prime choice for high-frequency,high-power switching [1].However,the inherent poor linearity of GaN HEMT has yet to be solved,which can be reflected by the nonlinearity of the transconductance (Gm) profile [2].This makes it hard to achieve high data transmission efficiency and less signal distortion in the wireless communication system [3]. | Sirui AN Minhan MI Pengfei WANG Sijia LIU Qing ZHU Meng ZHANG Zhihong CHEN Jielong LIU Siyin GUO Can GONG Xiaohua MA Yue HAO | 2024 | Science China(Information Sciences)2024，67，1： | 0 |
| 2 | A review on GaN HEMTs:nonlinear mechanisms and improvement methods显示文摘The GaN HEMT is a potential candidate for RF applications due to the high frequency and large power handling capability.To ensure the quality of the communication signal,linearity is a key parameter during the system design.However,the GaN HEMT usually suffers from the nonlinearity problems induced by the nonlinear parasitic capacitance,transconductance,channel transconductance etc.Among them,the transconductance reduction is the main contributor for the nonlinearity and is mostly attributed to the scattering effect,the increasing resistance of access region,the self-heating effect and the trapping effects.Based on the mechanisms,device-level improvement methods of transconductance including the trapping suppression,the nanowire channel,the graded channel,the double channel,the transconductance compensation and the new material structures have been proposed recently.The features of each method are reviewed and compared to provide an overview perspective on the linearity of the GaN HEMT at the device level. | Chenglin Du Ran Ye Xiaolong Cai Xiangyang Duan Haijun Liu Yu Zhang Gang Qiu Minhan Mi | 2023 | Journal of Semiconductors2023，44，12： | 0 |
| 3 | Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method显示文摘The etching process of high-performance recessed-gate In Al N/Ga N high-electron mobility transistors(HEMTs)has been actively researched.This paper proposes a post-etching self-limited surface restoration method that effectively suppresses the etching damage,enhancing the transport properties of recessed-gate In Al N/Ga N HEMTs.We fabricated planar-gate devices,inductively coupled plasma(ICP)-etched devices,and post-etching-treated(PET)devices.The damage caused by the ICP etching process severely deteriorated the transport properties of the devices.However,the post-etching process effectively inhibited the etching damage and improved the device transport properties.Through temperature-dependent tests and a simulation,the change in the peak transconductance was compared among different devices.The temperature-dependent optical phonon scattering and impurity-dependent remote charge scattering mechanisms were analyzed.The results confirmed that the etching damage significantly affected the channel electron scattering mechanism.The field-effect mobility showed a linear relationship with temperature,and the optical phonon scattering model illustrated that the field-effect mobility decreased with increasing temperature.The etching damage caused a decrease in the field-effect mobility from 1075.5 to 699.1 cm^(2)/V·s,which increased the fitting error between this empirical line and the optical phonon scattering fitting curve from 0.086 to 0.948,similar to the remote charge scattering fitting curve.The combined error range is from 0.896 to 0.054. | Siyu LIU Xiaohua MA Jiejie ZHU Minhan MI Jingshu GUO Jielong LIU Yilin CHEN Qing ZHU Ling YANG Yue HAO | 2022 | Science China(Information Sciences)2022，65，10： | 0 |
| 4 | Degradation induced by holes in Si_(3)N_(4)/AlGaN/GaN MIS HEMTs under off-state stress with UV light显示文摘In this study, the negative shift of the threshold voltage(VTH) and degradation of the leakage current triggered by the ultraviolet(UV) light(375 nm) have been investigated when a large reverse gateto-drain voltage was applied to a Si_(3)N_(4)/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor. However, an increase in leakage was not observed under the blue light or in the dark. The holes generated in the channel by UV illumination were attracted by the gate electrode owing to the reverse voltage.During the movement, holes were captured by border traps at very deep levels in the Si_(3)N_(4) near AlGaN,leading to a negative shift of VTH that was difficult to recover. According to the simulation based on Silvaco Atlas TCAD, the trapped holes significantly increased the electric field strength in Si_(3)N_(4). Therefore, as the injection barrier for electrons from the gate became thinner, it was easier for electrons to tunnel through the Si_(3)N_(4). Finally, for the degraded devices under the UV light stress, Fowler-Nordheim tunneling was the dominant leakage conduction mechanism, as exhibited by the current density versus electric field strength curve fitting. In addition, the holes with high energies collided with Si_(3)N_(4) and generated new defects at the edge of the gate near the drain side. | Yilin CHEN Qing ZHU Jiejie ZHU Minhan MI Meng ZHANG Yuwei ZHOU Ziyue ZHAO Xiaohua MA Yue HAO | 2023 | Science China(Information Sciences)2023，66，2： | 0 |
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