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41篇 您的检索式：作者名="Sak S"

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	题名	作者	年代	出处	被引量
1	Evaluation of the relationship between insulin resistance and recurrent pregnancy loss 显示文摘	Celik N Evsen M S Sak M E	2011	Ginekol Pol2011，82，4：	1
2	A Technique for suppressing dark current generated by interface states in buried channel CCD imagers 显示文摘	SAKS N S	1980	IEEE trans nucl sci1980，27，7：	1
3	Variants of papillary thyroid carcinoma:multiple faces of a familiar tumor显示文摘	Sak S D	2015	Turk Patoloji Derg2015，31，1：	1
4	Interface state trapping and dark cur-rent generation in buried channel charge-coupleddevices显示文摘	SAKS N S	1982	Journal of Applied Physics1982，53，：	1
5	Expression of p53 protein in pterygium显示文摘	Sak S Tulunay O Irkee M	1998	Eur J Ophthalmol1998，8，3：	1
6	Cesarean scar preg- nancy mimicking malignant tumor: a case report显示文摘	Soydinc H E Evsen M S Sak M E	2011	J Reprod Med2011，56，1112：	1
7	Saturation of radi- ation-induced threshold-voltage shifts in thin-oxideMOSFETs at 80 K显示文摘	Klein R B Saks N S Shanfield Z	1990	IEEE Trans Nucl Sci1990，37，6：	1
8	Generation of interface states by ionizing radiation at 80 k measured by charge pumping and subthreshold slope techniques 显示文摘	SAKS N S ANCONA M G	1987	IEEE Trans Nucl Sci1987，34，6：	1
9	Time-dependent interface state formation measured by charge pumping显示文摘	Saks N S Dozier C M Brown D B	1987	IEEE Trans Nucl Sci1987，34，6：	1
10	Formation of interface traps in MOSFETs during annealing following low temperature irradiation显示文摘	Saks N S Klein R B Griscom D L	1988	IEEE Trans Nucl Sci1988，35，6：	1
11	Utilization of Mixolabto predict the suitability of flours in terms of cake quality显示文摘	Kahraman K Sakyan O Ozturk S	2008	Eur Food Res Technol2008，227，：	1
12	Interface trap formation via the two-stage H^+ process 显示文摘	SAKS N S BROWN D B	1989	IEEE Trans Nucl Sci1989，36，6：	1
13	查看详情显示文摘	Saks N S Klein R B Griscom D L		0，，：	1
14	High temperature high-dose implantation of aluminum in 4H-SiC显示文摘	SAKS N S SUVOROV A V CAPELL D C	2004	Applied Physics Letters2004，84，25：	1
15	Radiation effects in MOS capacitors with very thin oxides at 80K显示文摘	SAKS N S ANCONA M G MODOLA J A	1984	IEEE Trans on Nuclear Science1984，31，6：	1
16	Low-dose n-type nitrogen implants in 4H-SiC显示文摘	SAKS N S RYU S-H SUVOROV A V	2002	Applied Physics Letters2002，81，26：	1
17	Determination of interface trap capture cross sections using three-level charge pumping 显示文摘	Saks N S Ancona M G	1990	IEEE Elec Dev Lett1990，11，8：	1
18	Generation of interface states by ionizing radiation in very thin MOS oxides 显示文摘	SAKS N S ANCONA M G MODOLO J A	1986	IEEE Transactions on Nuclear Science1986，33，6：	1
19	Numerical simulation of 3-level charge pumping 显示文摘	Ancona M G Saks N S	1992	J Appl Phys1992，，：	1
20	Generation of interface states by ionizing radiation in very thin MOS oxides 显示文摘	SAKS N S ANCONA M G MODOLO J A	1986	IEEE Trans Nucl Sci1986，33，6：	1

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