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您的检索式：作者名="Sourav Samanta"
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| 1 | Design of a Proportional-Integral-Derivative Controller for an Automatic Generation Control of Multi-area Power Thermal Systems Using Firefly Algorithm显示文摘Essentially, it is significant to supply the consumer with reliable and sufficient power. Since, power quality is measured by the consistency in frequency and power flow between control areas. Thus, in a power system operation and control,automatic generation control(AGC) plays a crucial role. In this paper, multi-area(Five areas: area 1, area 2, area 3, area 4 and area 5) reheat thermal power systems are considered with proportional-integral-derivative(PID) controller as a supplementary controller. Each area in the investigated power system is equipped with appropriate governor unit, turbine with reheater unit, generator and speed regulator unit. The PID controller parameters are optimized by considering nature bio-inspired firefly algorithm(FFA). The experimental results demonstrated the comparison of the proposed system performance(FFA-PID)with optimized PID controller based genetic algorithm(GAPID) and particle swarm optimization(PSO) technique(PSOPID) for the same investigated power system. The results proved the efficiency of employing the integral time absolute error(ITAE) cost function with one percent step load perturbation(1 % SLP) in area 1. The proposed system based FFA achieved the least settling time compared to using the GA or the PSO algorithms, while, it attained good results with respect to the peak overshoot/undershoot. In addition, the FFA performance is improved with the increased number of iterations which outperformed the other optimization algorithms based controller. | K.Jagatheesan B.Anand Sourav Samanta Nilanjan Dey Amira S.Ashour Valentina E.Balas | 2019 | IEEE/CAA Journal of Automatica Sinica2019，6，2： | 4 |
| 2 | Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO_x/TiO_x/TiN Structure显示文摘The resistive switching memory characteristics of 100 randomly measured devices were observed by reducing device size in a Cr/Cr Ox/Ti Ox/Ti N structure for the first time.Transmission electron microscope image confirmed a viahole size of 0.4 lm.A 3-nm-thick amorphous Ti Oxwith 4-nm-thick polycrystalline Cr Oxlayer was observed.A small 0.4-lm device shows reversible resistive switching at a current compliance of 300 l A as compared to other larger size devices(1–8 lm)owing to reduction of leakage current through the Ti Oxlayer.Good device-to-device uniformity with a yield of[85%has been clarified by weibull distribution owing to higher slope/shape factor.The switching mechanism is based on oxygen vacancy migration from the Cr Oxlayer and filament formation/rupture in the Ti Oxlayer.Long read pulse endurance of[105cycles,good data retention of 6 h,and a program/erase speed of 1 ls pulse width have been obtained. | Debanjan Jana Subhranu Samanta Sourav Roy Yu Feng Lin Siddheswar Maikap | 2015 | Nano-Micro Letters2015，7，4： | 2 |
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