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10篇 您的检索式：作者名="Stradins"

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		题名	作者	年代	出处	被引量
	1	Significant improvement in silicon chemical vapor deposition epitaxy above the surface dehydrogenation temperature显示文摘	WANG Q TEPLINC W STRADINS P	2006	Journal of Applied Physics2006，100，9：	1
	2	Large thrombosed saccular aneurysm of superior vena cava complicated by pulmonary embolism in a young woman显示文摘	Kalejs M Kolitis R Stradins P		0，，：	1
	3	Physical health of people with severe mental illness显示文摘	Phelan M Stradins L Morrison S	2001	British Medical Journal2001，32，2：	1
	4	Large thrombosed saceular an- eurysm of superior vena cava complicated by pulmonary embolism in a young woman显示文摘	Kalejs M Kolitis R Stradins P	2012	Eur J Cardiothorae Surg2012，41，5：	1
	5	Matrix-embedded Silicon Quantum Dots for Photovoltaic Applications:a Theoretical Study of Critical Factors显示文摘	Luo J W Stradins P Zunger A	2011	Energy&Environmental Science2011，4，7：	1
	6	In situ gas-phase hydrosilylation of plasma-synthesized silicon nanocrystals 显示文摘	JARIWALA B N DEWEY O S STRADINS P	2011	ACS Applied Materials & In- terfaces2011，3，8：	1
	7	Predicting the Effect of Viscosity Ratios on the Mixing of Polymer Blends Using the Boundary Element Method 显示文摘	Lindards Stradins Tim A Osswald	1996	Polymer Engineering and Science1996，36，7：	1
	8	Nanostructure evolution in hydrogenated amorphous silicon during hydrogen effusion and crystallization显示文摘	YOUNG D L STRADINS P XU Y GEDVILAS L M IWANICZKO E YAN Y BRANZ H M WANG Q WILLIAMSON D L	2007	Appl Phys Lett2007，90，08：	1
	9	Search for electrospun nanofiber materials matching the mechanical properties of native aortic valve 显示文摘	KALEJS M STRADINS P LACIS R	2013	International Journal of Materials Mechanics and Manufacturing2013，1，3：	1
	10	Pulsed Laser Annealed Ga Hyperdoped Poly-Si/SiO_(x)Passivating Contacts for High-Efficiency Monocrystalline Si Solar Cells显示文摘Polycrystalline Si(poly-Si)-based passivating contacts are promising candidates for high-efficiency crystalline Si solar cells.We show that nanosecond-scale pulsed laser melting(PLM)is an industrially viable technique to fabricate such contacts with precisely controlled dopant concentration profiles that exceed the solid solubility limit.We demonstrate that conventionally doped,hole-selective poly-Si/SiO_(x)contacts that provide poor surface passivation of c-Si can be replaced with Ga-or B-doped contacts based on non-equilibrium doping.We overcome the solid solubility limit for both dopants in poly-Si by rapid cooling and recrystallization over a timescale of∼25 ns.We show an active Ga dopant concentration of∼3×10^(20)cm^(−3)in poly-Si which is six times higher than its solubility limit in c-Si,and a B dopant concentration as high as∼10^(21) cm^(−3).We measure an implied open-circuit voltage of 735 mV for Ga-doped poly-Si/SiO_(x)contacts on Czochralski Si with a low contact resistivity of 35.5±2.4 mΩcm^(2).Scanning spreading resistance microscopy and Kelvin probe force microscopy show large diffusion and drift current in the p-n junction that contributes to the low contact resistivity.Our results suggest that PLM can be extended for hyperdoping of other semiconductors with low solubility atoms to enable high-efficiency devices.	Kejun Chen Enrico Napolitani Matteo De Tullio Chun-Sheng Jiang Harvey Guthrey Francesco Sgarbossa San Theingi William Nemeth Matthew Page Paul Stradins Sumit Agarwal David L.Young	2023	Energy & Environmental Materials2023，6，3：	0

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