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42篇 您的检索式：作者名="VISPUTE R D"

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	题名	作者	年代	出处	被引量
1	Oxygen pressure tuned epitaxy and optoelectronic properties o{ laser-deposited ZnO films on sapphire显示文摘	CHOOPUN S VISPUTE R D NOCH W	1999	Appl Phys Lett1999，75，25：	1
2	Oxygen pressuretuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire显示文摘	Choopun S Vispute R D Noch W	1999	Appl Phys Lett1999，75，25：	1
3	Epitaxial growth of AIN thin films on silicon(111) substrates by pulsed laser deposition显示文摘	Vispute R D Narayan J VVu Hong	1995	J Appl Phys1995，77，9：	1
4	Epitaxial growth of AlN thin films on silicon(111)suhstrate by pulsed laser deposition显示文摘	Vispute R D Wu H Narayan J	1995	Appl Phys Lett1995，67，27：	1
5	Heteroepitaxy of ZnO on GaN and its implicationsfor fabrication of hybrid optoelectronic devices 显示文摘	VISPUTE R D TALYANSKY V CHOOPUN S	1998	Appl Phys Lett1998，73，3：	1
6	Oxygen pressure - tuned epitaxy and optoelectronic properties of laser - deposited ZnO films on sapphire 显示文摘	Choopun S Vispute R D Noch W	1999	Applied Physics Letters1999，7，25：	1
7	Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices显示文摘	VISPUTE R D TALYANSKY V CHOOPUN S	1998	Appl Phys Lett1998，73，3：	1
8	High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for Ⅲ~Ⅴnitrides显示文摘	TALYANSKY V TRAJANOVIC Z	1997	Appl Phys Lett1997，70，20：	1
9	Heteroepi- taxy of ZnO on GaN and its implications for fabrication of hybrid optoeleetronie devices 显示文摘	Vispute R D Talyansky V Choopun S	1998	Applied Physics Let- ters1998，73，3：	1
10	Heteroepitaxy of ZnO on GaN and Its Implications for Fabrication of Hybrid Opetoelectronic Devices显示文摘	Vispute R D Talyansky V Choopun S	1998	Appl Phys Lett1998，73，：	1
11	显示文摘	Vispute R D Talyansky V Choopun S	1998	Appl Phys Lett1998，73，：	1
12	Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices显示文摘	Vispute R D Talyansky V Choopun S		0，，：	1
13	显示文摘	Choopun S Vispute R D Yang W	2002	Appl Phys Lett2002，80，：	1
14	Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices显示文摘	Vispute R D Talyansky V Choopun S	1998	Appl Phys Lett1998，73，3：	1
15	Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices显示文摘	Vispute R D Talyansky V Choopun S	1998	Appl phys Lett1998，73，3：	1
16	显示文摘	Choopun S Vispute R D Yang W	2002	Appl Phys Lett2002，80，：	1
17	Oxygen Pressure-tuned Epitaxy and Optoelectronic Properties of Laser-deposited ZnO Films on Sapphire显示文摘	Choopus S Vispute R D Noch W	1999	ApplPhysLert1999，75，25：	1
18	Removal of char particles from fast pyrolysis bio-oil by microfiltration显示文摘	JAVAID A RYAN T BERG G PAN X VISPUTE T BHATIA S R HUBER G W FORD D M	2010	J Membr Sci2010，363，12：	1
19	Advances in pulsed-laser-deposited A1N thin films for high temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS Resonator Applica- tions 显示文摘	HULLAVARAD S S VISPUTE R D NAGARAJ B	2014	Journal of Electronic Materials2014，35，14：	1
20	Ohmic Metallization Technology for wide Band-gap Semiconductors显示文摘	A A Iliadis R D Vispute T Venkatesan	2002	Thin Solid Films2002，，420421：	1

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