| 1 | Graphene-based bipolar plates for polymer electrolyte membrane fuel cells显示文摘Bipolar plates(BPs)are a major component of polymer electrolyte membrane fuel cells(PEMFCs).BPs play a multifunctional character within a PEMFC stack.It is one of the most costly and critical part of the fuel cell,and hence the development of efficient and cost-effective BPs is of much interest for the fabrication of next-generation PEMFCs in future.Owing to high electrical conductivity and chemical inertness,graphene is an ideal candidate to be utilized in BPs.This paper reviews recent advances in the area of graphene-based BPs for PEMFC applications.Various aspects including the momentous functions of BPs in the PEMFC,favorable features of graphene.based BPs,performance evaluation of various reported BPs with their advantages and disadvantages,challenges at commercial level products and future prospects of frontier research in this direction are extensively documented. | Ram Sevak SINGH(El) Anurag GAUTAM Varun RAI | 2019 | Frontiers of Materials Science2019，13，3： | 3 |
| 2 | Design and investigation of doping-less gate-all-around TFET with Mg_(2)Si source material for low power and enhanced performance applications显示文摘Metal–oxide–semiconductor field-effect transistor(MOSFET)faces the major problem of being unable to achieve a subthreshold swing(SS)below 60 mV/dec.As device dimensions continue to reduce and the demand for high switching ratios for low power consumption increases,the tunnel field-effect transistor(TFET)appears to be a viable device,displaying promising characteristic as an answer to the shortcomings of the traditional MOSFET.So far,TFET designing has been a task of sacrificing higher ON state current for low subthreshold swing(and vice versa),and a device that displays both while maintaining structural integrity and operational stability lies in the nascent stages of popular research.This work presents a comprehensive analysis of a heterojunction plasma doped gate-all-around TFET(HPD-GAA-TFET)by making a comparison between Mg_(2)Si and Si which serve as source materials.Charge plasma technique is employed to implement doping in an intrinsic silicon wafer with the help of suitable electrodes.A low-energy bandgap material,i.e.magnesium silicide is incorporated as source material to form a heterojunction between source and silicon-based channel.A rigorous comparison of performance between Si-based GAA-TFET and HPD-GAA-TFET is conducted in terms of electrical,radio frequency(RF),linearity,and distortion parameters.It is observable that HPD-GAA-TFET outperforms conventional Si-based GAA-TFET with an ON-state current(I_(ON)),subthreshold swing(SS),threshold voltage(V_(th)),and current switching ratio being 0.377 mA,12.660 mV/dec,0.214 V,and 2.985×10^(12),respectively.Moreover,HPD-GAA-TFET holds faster switching and is more reliable than Si-based device.Therefore,HPD-GAA-TFET is suitable for low-power applications. | Pranav Agarwal Sankalp Rai Rakshit Y.A Varun Mishra | 2023 | Chinese Physics B2023，32，10： | 0 |
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