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| 1 | Nonlinear optical properties of integrated GeSbS chalcogenide waveguides显示文摘In this paper, we report the experimental characterization of highly nonlinear Ge Sb S chalcogenide glass waveguides.We used a single-beam characterization protocol that accounts for the magnitude and sign of the real and imaginary parts of the third-order nonlinear susceptibility of integrated Ge23 Sb7 S70(GeSbS) chalcogenide glass waveguides in the near-infrared wavelength range at λ =1580 nm. We measured a waveguide nonlinear parameter of 7.0±0.7 W^(-1)· m(-1), which corresponds to a nonlinear refractive index of n_2=0.93±0.08 × 10^(-18) m^2∕W,comparable to that of silicon, but with an 80 times lower two-photon absorption coefficient βTPA=0.010± 0.003 cm∕GW, accompanied with linear propagation losses as low as 0.5 dB/cm. The outstanding linear and nonlinear properties of Ge Sb S, with a measured nonlinear figure of merit FOMTPA=6.0 ±1.4 at λ =1580 nm, ultimately make it one of the most promising integrated platforms for the realization of nonlinear functionalities. | SAMUEL SERNA HONGTAO LIN CARLOS ALONSO-RAMOS ANUPAMA YADAV XAVIER LE ROUX KATHLEEN RICHARDSON ERIC CASSAN NICOLAS DUBREUIL JUEJUN HU LAURENT VIVIEN | 2018 | Photonics Research2018，6，5： | 3 |
| 2 | 25 Gbps low-voltage hetero-structured silicongermanium waveguide pin photodetectors for monolithic on-chip nanophotonic architectures显示文摘Near-infrared germanium(Ge) photodetectors monolithically integrated on top of silicon-on-insulator substrates are universally regarded as key enablers towards chip-scale nanophotonics, with applications ranging from sensing and health monitoring to object recognition and optical communications. In this work, we report on the highdata-rate performance pin waveguide photodetectors made of a lateral hetero-structured silicon-Ge-silicon(Si-Ge-Si) junction operating under low reverse bias at 1.55 μm. The pin photodetector integration scheme considerably eases device manufacturing and is fully compatible with complementary metal-oxide-semiconductor technology. In particular, the hetero-structured Si-Ge-Si photodetectors show efficiency-bandwidth products of^9 GHz at-1 V and ~30 GHz at-3 V, with a leakage dark current as low as ~150 nA, allowing superior signal detection of high-speed data traffic. A bit-error rate of 10-9 is achieved for conventional 10 Gbps, 20 Gbps, and25 Gbps data rates, yielding optical power sensitivities of-13.85 dBm,-12.70 dBm, and-11.25 dBm, respectively. This demonstration opens up new horizons towards cost-effective Ge pin waveguide photodetectors that combine fast device operation at low voltages with standard semiconductor fabrication processes, as desired for reliable on-chip architectures in next-generation nanophotonics integrated circuits. | DANIEL BENEDIKOVIC LéOPOLD VIROT GUY AUBIN FARAH AMAR BERTRAND SZELAG BAYRAM KARAKUS JEAN-MICHEL HARTMANN CARLOS ALONSO-RAMOS XAVIER LE ROUX PAUL CROZAT ERIC CASSAN DELPHINE MARRIS-MORINI CHARLES BAUDOT FRéDéRIC BOEUF JEAN-MARC FéDéLI CHRISTOPHE KOPP LAURENT VIVIEN | 2019 | Photonics Research2019，7，4： | 2 |
| 3 | Supercontinuum generation in silicon photonics platforms显示文摘Nonlinear optics has not stopped evolving,offering opportunities to develop novel functionalities in photonics.Supercontinuum generation,a nonlinear optical phenomenon responsible for extreme spectral broadening,attracts the interest of researchers due to its high potential in many applications,including sensing,imaging,or optical communications.In particular,with the emergence of silicon photonics,integrated supercontinuum sources in silicon platforms have seen tremendous progress during the past decades.This article aims at giving an overview of supercontinuum generation in three main silicon-compatible photonics platforms,namely,silicon,silicon germanium,and silicon nitride,as well as the essential theoretical elements to understand this fascinating phenomenon. | Christian Lafforgue Miguel Montesinos-Ballester Thi-Thuy-Duong Dinh Xavier Le Roux Eric Cassan Delphine Marris-Morini Carlos Alonso-Ramos Laurent Vivien | 2022 | Photonics Research2022，10，3： | 1 |
| 4 | Large group-index bandwidth product empty core slow light photonic crystal waveguides for hybrid silicon photonics显示文摘这份报纸在绝缘体上在硅调查慢轻的繁殖宽槽 photonic 水晶波导(PCW ) 。二个设计计划被介绍,分别地依靠洞格子和槽的分散工程。模式模式和乐队图被 3D 飞机波浪扩大方法计算。然后,联合并且慢轻的繁殖在完整的 Mach-Zehnder 干涉仪(MZI ) 用有限差别时间领域方法被建模。结果显示出高振幅干扰穗和高联合效率。设备的制造和测量超过 50 与组索引导致慢轻的繁殖,当在也观察的乐队边附近的多重散布和局部性的模式时。这研究提供卓见因为在空核心槽的损失高组织索引波导。 | Charles CAER Xavier LE ROUX Samuel SERNA Weiwei ZHANG Laurent VIVIEN Eric CASSAN | 2014 | Frontiers of Optoelectronics2014，7，3： | 1 |
| 5 | Ultra-compact on-chip metaline-based 1.3/1.6 μm wavelength demultiplexer显示文摘In this paper, we report an experimental demonstration of enabling technology exploiting resonant properties of plasmonic nanoparticles, for the realization of wavelength-sensitive ultra-minituarized(4 μm× 4 μm) optical metadevices. To this end, the example of a 1.3/1.6 μm wavelength demultiplexer is considered. Its technological implementation is based on the integration of gold cut-wire-based metalines on the top of a silicon-on-insulator waveguide. The plasmonic metalines modify locally the effective index of the Si waveguide and thus allow for the implementation of wavelength-dependent optical pathways. The 1.3/1.6 μm wavelength separation with extinction ratio between two demultiplexers' channels reaching up to 20 dB is experimentally demonstrated. The considered approach, which can be readily adapted to different types of material planar lightwave circuit platforms and nanoresonators, is suited for the implementation of a generic family of wavelength-sensitive guided-wave optical metadevices. | YULONG FAN XAVIER LE ROUX ANATOLE LUPU ANDRé DE LUSTRAC | 2019 | Photonics Research2019，7，3： | 1 |
| 6 | Broadband supercontinuum generation in nitrogen-rich silicon nitride waveguides using a 300 mm industrial platform显示文摘We report supercontinuum generation in nitrogen-rich(N-rich)silicon nitride waveguides fabricated through back-end complementary-metal-oxide-semiconductor(CMOS)-compatible processes on a 300 mm platform.By pumping in the anomalous dispersion regime at a wavelength of 1200 nm,two-octave spanning spectra covering the visible and near-infrared ranges,including the O band,were obtained.Numerical calculations showed that the nonlinear index of N-rich silicon nitride is within the same order of magnitude as that of stoichiometric silicon nitride,despite the lower silicon content.N-rich silicon nitride then appears to be a promising candidate for nonlinear devices compatible with back-end CMOS processes. | CHRISTIAN LAFFORGUE SYLVAIN GUERBER JOAN MANEL RAMIREZ GUILLAUME MARCAUD CARLOS ALONSO-RAMOS XAVIER LE ROUX DELPHINE MARRIS-MORINI ERIC CASSAN CHARLES BAUDOT FRéDéRIC BOEUF SéBASTIEN CREMER STéPHANE MONFRAY LAURENT VIVIEN | 2020 | Photonics Research2020，8，3： | 0 |
| 7 | Third-order nonlinear optical susceptibility of crystalline oxide yttria-stabilized zirconia显示文摘Nonlinear all-optical technology is an ultimate route for the next-generation ultrafast signal processing of optical communication systems.New nonlinear functionalities need to be implemented in photonics,and complex oxides are considered as promising candidates due to their wide panel of attributes.In this context,yttria-stabilized zirconia(YSZ)stands out,thanks to its ability to be epitaxially grown on silicon,adapting the lattice for the crystalline oxide family of materials.We report,for the first time to the best of our knowledge,a detailed theoretical and experimental study about the third-order nonlinear susceptibility in crystalline YSZ.Via self-phase modulation-induced broadening and considering the in-plane orientation of YSZ,we experimentally obtained an effective Kerr coefficient of n2YSZ=4.0±2×10^-19 m^2·W^-1 in an 8%(mole fraction)YSZ waveguide.In agreement with the theoretically predicted n2YSZ=1.3×10^-19 m^2·W^-1,the third-order nonlinear coefficient of YSZ is comparable with the one of silicon nitride,which is already being used in nonlinear optics.These promising results are a new step toward the implementation of functional oxides for nonlinear optical applications. | GUILLAUME MARCAUD SAMUEL SERNA KARAMANIS PANAGHIOTIS CARLOS ALONSO-RAMOS XAVIER LE ROUX MATHIAS BERCIANO THOMAS MAROUTIAN GUILLAUME AGNUS PASCAL AUBERT ARNAUD JOLLIVET ALICIA RUIZ-CARIDAD LUDOVIC LARGEAU NATHALIE ISAC ERIC CASSAN SYLVIA MATZEN NICOLAS DUBREUIL MICHEL RERAT PHILIPPE LECOEUR LAURENT VIVIEN | 2020 | Photonics Research2020，8，2： | 0 |
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