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	题名	作者	年代	出处	被引量
1	Investigation of microstructure modification of C-doped a-SiO_2/Si after Pb-ion irradiation显示文摘Thermally grown amorphous SiO 2 (a-SiO 2) films were implanted at room temperature (RT) with 100 keV C-ions to 5.0×10 17 ions/cm 2.These samples were irradiated at RT with 853 MeV Pb-ions to 1.0×10 12 and 5.0×10 12 ions/cm 2.Then the samples were investigated using Transmission Electron Microscopy (TEM) at RT.Significant microstructure modifications were observed in C-doped a-SiO 2/Si samples after high energy Pb-ion irradiations,and the formation of new structures depended strongly on the Pb-ion irradiation fluences.For example,tracks in high density were observed in a 1.0×10 12 Pb/cm 2 irradiated and C-doped sample.Additionally,the length of tracks grows,and a large number of 8H-SiC nanocrystals can be seen in the film when irradiation fluence is increased to 5.0×10 12 Pb/cm 2.Possible modification processes of C-doped a-SiO 2 under swift heavy ion irradiations are briefly discussed.	LIU ChunBao WEI KongFang YAO CunFeng WANG ZhiGuang JIN YunFan TOULEMONDE M	2012	Science China(Physics,Mechanics & Astronomy)2012，55，2：	2
2	Investigation of swelling induced by heavy ion and neutron irradiation in SiC显示文摘	Hang Zang Daxi Guo Tielong Shen Chaohui He Zhiguang Wang Lilong Pang Cunfeng Yao Tao Yang	2013	Journal of Nuclear Materials . 2013 (1-3)2013，，1：	1
3	Investigation on transient dynamic behaviors of low-tension undersea cables显示文摘	HUO Cunfeng YAO Baoheng FU Bin		0，，01：	1
4	Photoluminescence Character of Xe Ion Irradiated Sapphire显示文摘	Song Yin Zhou Lihong Gou Jie Zhang Chonghong Ma Yizhong Yao Cunfeng Zang Hang Sheng Yanbin	2008	近代物理研究所和兰州重离子加速器实验室年报:英文版2008，，1：	1
5	Investigation on transient dynamic behaviors of low-tension undersea ca- bles 显示文摘	HUO Cunfeng YAO Baoheng FU Bin	2011	Journal of Shanghai Tiao Tong University: Science2011，16，1：	1
6	Photoluminescence Character of Silicon Dioxide Irradiated by Xe, Kr and Bi Ions显示文摘	Song Yin Zhang Chonghong Yao Cunfeng Li Binsheng Sheng Yanbin Gou Jie	2009	近代物理研究所和兰州重离子加速器实验室年报:英文版2009，，1：	0
7	Magnetic Study on 2.03 GeV Kr-ions Irradiated Fe3O4 Thin Films显示文摘	Sun Jianrong Wei Kongfang Shen Tielong Yao Cunfeng Sheng Yanbin Gou Jie Wang Zhiguang Li Fashen	2009	近代物理研究所和兰州重离子加速器实验室年报:英文版2009，，1：	0
8	Raman Scattering Investigation of C-doped a-SiO2 after High Energy Heavy Ion Irradiation显示文摘	Liu Chunbao Wang Zhiguang Song Yin Zang Hang Wei Kongfang A. Benyagoub M. Toulemonde Zhang Chonghong Yao Cunfeng Zhou Lihong Sheng Yanbin	2006	近代物理研究所和兰州重离子加速器实验室年报:英文版2006，，1：	0
9	Inter-mixing of Ni/c-SiO2 after High Energy Ion Irradiations显示文摘	Liu Chunbao Wang Zhiguang Peng Xinping Song Yin Zang Hang Wei Kongfang Yao Cunfeng M. Toulemonde	2006	近代物理研究所和兰州重离子加速器实验室年报:英文版2006，，1：	0
10	FTIR Investigation of C-implanted Amorphous SiO2 after 308 MeV Xe-ion Irradiation显示文摘	Liu Chunbao Wang Zhiguang Song Yin Zang Hang Zhang Chonghong Wei Kongfang Yao Cunfeng Zhou Lihong Sheng Yanbin Ma Yizhun Yang Yitao	2006	近代物理研究所和兰州重离子加速器实验室年报:英文版2006，，1：	0
11	XRD Investigation of Ti/c-SiO2 Interface after Pb-ion Irradiation显示文摘	Liu Chunbao Wang Zhiguang Peng Xinping Song Yin Zang Hang Wei Kongfang Yao Cunfeng M. Toulemonde	2006	近代物理研究所和兰州重离子加速器实验室年报:英文版2006，，1：	0
12	Nuclear Physics and Interdiscipline——Modification of Structure and Optical Band-gap of nc-Si : H Films with Ion Irradiation显示文摘	Zhu Yabin Wang Zhiguang Sun Jianrong Yao Cunfeng Shen Tielong Chang Hailong Li Bingsheng Wei Kongfang Pang Lilong Sheng Yanbin Cui Minghuan Zhang Hongpeng Li Yuanfei Wang Ji Zhu Huiping	2011	IMP & HIRFL Annual Report2011，，1：	0
13	Micro-raman Study on a-Si, nc-Si and c-Si irradiated by 6 MeV Bi-ions显示文摘	Zhu Yabin Wang Zhiguang Sun Jianrong Yao Cunfeng Shen Tielong Chang Hailong Li Bingsheng Wei Kongfang Pang Lilong Sheng Yanbin Cui Minghuan Zhang Hongpeng Li Yuanfei Wang Ji Zhu Huiping	2011	IMP & HIRFL Annual Report2011，，1：	0
14	Structural and Magnetic Properties Studies on Swift Heavy Ion (SHI) Irradiated Fe-based Amorphous Alloys显示文摘	Sun Jianrong Wang Zhiguang Jin Yunfang Zhu Yabin Shen Tielong Yao Cunfeng Pang Lilong Wei Kongfang Sheng Yanbin Chang Hailong Zhang Hongpeng Wang Ji Zhu Huiping	2011	IMP & HIRFL Annual Report2011，，1：	0
15	Modification of LiTaO3 Crystal by Low-energy He-ion Implantation显示文摘	Pang Lilong Wang Zhiguang Jin Yunfan Sun Jianrong Yao Cunfeng Cui Minghuan Wei Kongfang Shen Tielong Sheng Yanbin Zhu Yabin Li Yuanfei Wang Ji Zhu Huiping	2011	IMP & HIRFL Annual Report2011，，1：	0
16	Investigation of Structural Modification of Lithium Tantalate Crystal Implanted by Low Energy H-ion显示文摘	Pang Lilong Wang Zhiguang Yao Cunfeng Li Yuanfei Sun Jianrong Li Bingsheng Shen Tielong Cui Minghuan Wei Kongfang Sheng Yanbin Zhu Yabin Wang Ji Zhu Huiping	2011	IMP & HIRFL Annual Report2011，，1：	0
17	Hardening of Tungsten Induced by 200 keV Helium Ions显示文摘	Cui Minghuan Wang Zhiguang Yao Cunfeng Shen Tielong Li Bingsheng Sun Jianrong Pang Lilong Sheng Yanbin Zhu Yabin Li Yuanfei	2011	IMP & HIRFL Annual Report2011，，1：	0
18	Development of a Static LBE Corrosion Equipment显示文摘	Wang Ji Wang Zhigang Yao Cunfeng Sun JianRong Sheng Yanbin Cui Minghuan Li yuanfei Zhu Huiping Zhang Hongpeng Li Bingsheng Chang Hailong	2011	IMP & HIRFL Annual Report2011，，1：	0
19	22 AMeV Fe Ions Induced Irradiation Damage in C_(60) Films: a Raman spectra study显示文摘In order to investigate the structural stability of fullerene (C60) under swift heavy ion irradiation, the irradiation experiments of thin C60 films were performed with 22 AMeV 56Fe ions delivered by HIRFL. The flux was not more than 1×108 ions/cm2·s to limit thermal effects during irradiation. The irradiation fluences were 5×1010- 8×1013 ions/cm2.	Jin Yunfan Yao Cunfeng Wang Zhiguang Xie Erqing Song Yin Sun Youmei Zhang Chonghong Liu Jie Duan Jinglai	2004	近代物理研究所和兰州重离子加速器实验室年报:英文版2004，，1：	0
20	Enhanced Defect Accumulation and Erosion in GaN Bombarded with Low-energy Highly Charged Heavy Ions显示文摘Gallium nitride (GaN) has received great attention because its outstanding properties are suitable for the development of novel microelectronic and optoelectronic devices. Ion beam implantation/engineering is an attractive method for device techniques such as selective-area doping or dry etching. The understanding of the damage production in GaN bombarded with energetic ions is fundamentally useful for the applications.	Zhang Chonghong Sun Youmei Song Yin Chen Hong Zhao Zhiming Yao Cunfeng Wang Zhiguang Liu Cunbao Yang Yitao Ma Hongji Nie Pui	2004	近代物理研究所和兰州重离子加速器实验室年报:英文版2004，，1：	0

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