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43篇 您的检索式:作者名="YEOM G Y"
    题名 作者 年代 出处 被引量
1Inductively coupled plasma etching of InP in Cl2/Ar plasmas显示文摘KIM H S YEOM G Y LEE J W 1999Thin Solid Films1999,341,2:1
2Study of shallow silicon trench etch process using planar inductively coupled plasmas显示文摘LEE J H YEOM G Y LEE J W 1997J Vacuum Sci Technol A1997,15,3:1
3Development of korean high altitude platform systems显示文摘Lee Y G Kim D M Yeom C H 2006International Journal of Wireless Information Networks2006,13,1:1
4Poly( DMAEMA-NVP)-b- PEG-galactose as gene delivery vector for hepatocytes 显示文摘LIM D W Yeom Y I PARK T G 2000Bioconjugate Chem2000,11,5:1
5Development of Korean high alti- tude platform systems 显示文摘LEE Y G KIM D M YEOM C H 2006International Journal of Wireless Informa- tion Networks2006,13,1:1
6Anti-inflammatory effect of platelet- rich plasma on nucleus pulposus cells with response of TNF-alpha and IL-1 显示文摘KIM H J YEOM J S KOH Y G 2014J Orthop Res2014,32,4:1
7Development of Korean high alti- tude plaffoml systems显示文摘Y G Lee D M Kim C H Yeom 2006Wireless hfformation Networks2006,13,1:1
8Anti-inflammatory effect of platelet- rich plasma on nucleus pulposus cells with response of TNF- alpha and 1L- 1 显示文摘KIM H J YEOM J S KOH Y G 2014J Orthop Res2014,32,55:1
9Plasma and Antenna Charac- teristics of a Linearly Extended Inductively Coupled Plasma System Using Multi-Polar Magnetic Field 显示文摘Kim K N IZn J H Yeom G Y 2007Thin Solid Films2007,515,:1
10Magnetized inductively coupled plasma etching of GaN in Cl2/BCl3 plasmas显示文摘LEE Y H SUNG Y J YEOM G Y 2000J Vac Sci Technol A2000,18,4:1
11Germline regulatory element of Oct4 specific for the totipotent cycle of embryonal cells显示文摘Yeom Y I Fuhrmann G Ovitt C E 1996Development1996,122,:1
12Si/SiOz etch properties using CF4 and CHF3 in radio frequency cylindrical magnetron discharges显示文摘Yeom G Y Kushner M J 1990Appl Phys Lett1990,6,9:1
13Fabrication of trench nanostructures for extreme ultraviolet lithography masks by atomic force microscope lithography显示文摘KWON G KO K LEE H LIM W YEOM G Y LEE S and AHN J 0,,:1
14A study of GaN etch mechanisms using inductively coupled Cl2/Ar plasma 显示文摘Kim H S Yeom G Y Lee J W 1999Thin Solid Films1999,341,2:1
15Electrical,optical and structural characteristics of ITO thin films by krypton and oxygen dual ion-beam assisted evaporation at room temperature显示文摘 BAE J W KIM J S KIM K S JANG Y C YEOM G Y LEE N E 2000Thin Solid Films2000,37,7378:1
16Properties and applications of a modified dielec- tric barrier discharge generated at atmospheric pressure显示文摘Lee Y H Yeom G Y 2005Japanese Journal of Applied Physics2005,44,2:1
17Effects ofinductively coupled plasma conditions on the etch propertiesof GaN and ohmic contact formations显示文摘KIM H S LEE Y H YEOM G Y 1997MaterialsScience and Engineering1997,50,123:1
18Characteristics of inductively coupled Cl2/BCl3plasmas during GaN etching显示文摘Kim H S Yeom G Y Lee J W 1999Journal of Vacuum Science&Technology a-Vacuum Surfaces and Films1999,17,4:1
19Development of Korean high altitude platform systems显示文摘Lee Y G Kim D M Yeom C H 2006Int J Wireless Information Networks2006,13,1:1
20Magnetized inductively coupled plasma etching of GaNin Cl2/BCl3 plasmas显示文摘LEE Y H SUNG Y J YEOM G Y 2000J Vac Sci Technol:A2000,18,4:1
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