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| 1 | A versatile photodetector assisted by photovoltaic and bolometric effects显示文摘The advent of low-dimensional materials with peculiar structure and superb band properties provides a new canonical form for the development of photodetectors.However,the limited exploitation of basic properties makes it difficult for devices to stand out.Here,we demonstrate a hybrid heterostructure with ultrathin vanadium dioxide film and molybdenum ditelluride nanoflake.Vanadium dioxide is a classical semiconductor with a narrow bandgap,a high temperature coefficient of resistance,and phase transformation.Molybdenum ditelluride,a typical two-dimensional material,is often used to construct optoelectronic devices.The heterostructure can realize three different functional modes:(i)the p-n junction exhibits ultrasensitive detection(450 nm-2μm)with a dark current down to 0.2 pA and a response time of 17μs,(ii)the Schottky junction works stably under extreme conditions such as a high temperature of 400 K,and(iii)the bolometer shows ultrabroad spectrum detection exceeding 10μm.The flexible switching between the three modes makes the heterostructure a potential candidate for next-generation photodetectors from visible to longwave infrared radiation(LWIR).This type of photodetector combines versatile detection modes,shedding light on the hybrid application of novel and traditional materials,and is a prototype of advanced optoelectronic devices. | Wei Jiang Tan Zheng Binmin Wu Hanxue Jiao Xudong Wang Yan Chen Xiaoyu Zhang Meng Peng Hailu Wang Tie Lin Hong Shen Jun Ge Weida Hu Xiaofeng Xu Xiangjian Meng Junhao Chu Jianlu Wang | 2020 | Light(Science & Applications)2020，9，1： | 3 |
| 2 | Van der Waals two-color infrared photodetector显示文摘With the increasing demand for multispectral information acquisition,infrared multispectral imaging technology that is inexpensive and can be miniaturized and integrated into other devices has received extensive attention.However,the widespread usage of such photodetectors is still limited by the high cost of epitaxial semiconductors and complex cryogenic cooling systems.Here,we demonstrate a noncooled two-color infrared photodetector that can provide temporal-spatial coexisting spectral blackbody detection at both near-infrared and mid-infrared wavelengths.This photodetector consists of vertically stacked back-to-back diode structures.The two-color signals can be effectively separated to achieve ultralow crosstalk of~0.05%by controlling the built-in electric field depending on the intermediate layer,which acts as an electron-collecting layer and hole-blocking barrier.The impressive performance of the two-color photodetector is verified by the specific detectivity(D^(*))of 6.4×10^(9)cm Hz^(1/2)W^(−1)at 3.5μm and room temperature,as well as the promising NIR/MWIR two-color infrared imaging and absolute temperature detection. | Peisong Wu Lei Ye Lei Tong Peng Wang Yang Wang Hailu Wang Haonan Ge Zhen Wang Yue Gu Kun Zhang Yiye Yu Meng Peng Fang Wang Min Huang Peng Zhou Weida Hu | 2022 | Light(Science & Applications)2022，11，2： | 2 |
| 3 | Stoichiometric effect on electrical and near-infrared photodetection properties of full-composition-range GaAs1−xSbx nanowires显示文摘As one of the most important narrow bandgap ternary semiconductors, GaAs1−xSbx nanowires (NWs) have attracted extensive attention recently, due to the superior hole mobility and the tunable bandgap, which covers the whole near-infrared (NIR) region, for technological applications in next-generation high-performance electronics and NIR photodetection. However, it is still a challenge to the synthesis of high-quality GaAs1−xSbx NWs across the entire range of composition, resulting in the lack of correlation investigation among stoichiometry, microstructure, electronics, and NIR photodetection. Here, we demonstrate the success growth of high-quality GaAs1−xSbx NWs with full composition range by adopting a simple and low-cost surfactant-assisted solid source chemical vapor deposition method. All of the as-prepared NWs are uniform, smooth, and straight, without any phase segregation in all stoichiometric compositions. The lattice constants of each NW composition have been well correlated with the chemical stoichiometry and confirmed by high-resolution transmission electron microscopy, X-ray diffraction, and Raman spectrum. Moreover, with the increase of Sb concentration, the hole mobility of the as-fabricated field-effect-transistors and the responsivity and detectivity of the as-fabricated NIR photodetectors increase accordingly. All the results suggest a careful stoichiometric design is required for achieving optimal NW device performances. | Jiamin Sun Mingming Han Meng Peng Lei Zhang Dong Liu Chengcheng Miao Jiafu Ye Zhiyong Pang Longbing He Hailu Wang Qing Li Peng Wang Lin Wang Xiaoshuang Chen Chongxin Shan Litao Sun Weida Hu Zai-xing Yang | 2021 | Nano Research2021，14，11： | 1 |
| 4 | A gate-free MoS2 phototransistor assisted by ferroelectrics显示文摘During the past decades,transition metal dichalcogenides(TMDs) have received special focus for their unique properties in photoelectric detection.As one important member of TMDs,MoS2 has been made into photodetector purely or combined with other materials,such as graphene,ionic liquid,and ferroelectric materials.Here,we report a gate-free MoS2 phototransistor combined with organic ferroelectric material poly(vinylidene fluoride-trifluoroethylene)(P(VDF-TrFE)).In this device,the remnant polarization field in P(VDF-TrFE) is obtained from the piezoelectric force microscope(PFM) probe with a positive or negative bias,which can turn the dipoles from disorder to be the same direction.Then,the MoS2 channel can be maintained at an accumulated state with downward polarization field modulation and a depleted state with upward polarization field modulation.Moreover,the P(VDF-TrFE) segregates MoS2 from oxygen and water molecules around surroundings,which enables a cleaner surface state.As a photodetector,an ultra-low dark current of 10^–11 A,on/off ration of more than 10^4 and a fast photoresponse time of 120 μs are achieved.This work provides a new method to make high-performance phototransistors assisted by the ferroelectric domain which can operate without a gate electrode and demonstrates great potential for ultra-low power consumption applications. | Shuaiqin Wu Guangjian Wu Xudong Wang Yan Chen Tie Lin Hong Shen Weida Hu Xiangjian Meng Jianlu Wang Junhao Chu | 2019 | Journal of Semiconductors2019，40，9： | 1 |
| 5 | Recent progress and challenges on two-dimensional material photodetectors from the perspective of advanced characterization technologies显示文摘Atomically thin two-dimensional(2D)materials exhibit enormous potential in photodetectors because of novel and extraordinary properties,such as passivated surfaces,tunable bandgaps,and high mobility.High-performance photodetectors based on 2D materials have been fabricated for broadband,position,polarization-sensitive detection,and large-area array imaging.However,the current performance of 2D material photodetectors is not outstanding enough,including response speed,detectivity,and so forth.The way to further promote the development of 2D material photodetectors and their corresponding practical applications is still a tremendous challenge.In this article,these issues of 2D material photodetectors are analyzed and expected to be solved by combining micro-nano characterization technologies.The inherent physical properties of 2D materials and photodetectors can be accurately characterized by Raman spectroscopy,transmission electron microscopy(TEM),and scattering scanning near-field optical microscope(s-SNOM).In particular,the precise probe of lattice defects,doping concentration,and near-field light absorption characteristics can promote the researches of low-noise and high-responsivity photodetectors.Scanning photocurrent microscope(SPCM)can show the overall spatial distribution of photocurrent and analyze the mechanism of photocurrent.Photoluminescence(PL)spectroscopy and Kelvin probe force microscope(KPFM)can characterize the material bandgap,work function distribution and interlayer coupling characteristics,making it possible to design high-performance photodetectors through energy band engineering.These advanced characterization techniques cover the entire process from material growth,to device preparation,and to performance analysis,and systematically reveal the development status of 2D material photodetectors.Finally,the prospects and challenges are discussed to promote the application of 2D material photodetectors. | Fang Zhong Hao Wang Zhen Wang Yang Wang Ting He Peisong Wu Meng Peng Hailu Wang Tengfei Xu Fang Wang Peng Wang Jinshui Miao Weida Hu | 2021 | Nano Research2021，14，6： | 1 |
| 6 | Integrating 2D layered materials with 3D bulk materials as van der Waals heterostructures for photodetections:Current status and perspectives显示文摘In the last decade,two-dimensional layered materials(2DLMs)have been drawing extensive attentions due to their unique properties,such as absence of surface dangling bonds,thickness-dependent bandgap,high absorption coeffi-cient,large specific surface area,and so on.But the high-quality growth and transfer of wafer-scale 2DLMs films is still a great challenge for the commerciali-zation of pure 2DLMs-based photodetectors.Conversely,the material growth and device fabrication technologies of three-dimensional(3D)semiconductors photodetectors tend to be gradually matured.However,the further improvement of the photodetection performance is limited by the difficult heterogeneous inte-gration or the inferior crystal quality via heteroepitaxy.Fortunately,2D/3D van der Waals heterostructures(vdWH)combine the advantages of the two types of materials simultaneously,which may provide a new platform for developing high-performance optoelectronic devices.Here,we first discuss the unique advantages of 2D/3D vdWH for the future development of photodetection field and simply introduce the structure categories,working mechanisms,and the typical fabrication methods of 2D/3D vdWH photodetector.Then,we outline the recent progress on 2D/3D vdWH-based photodetection devices integrating 2DLMs with the traditional 3D semiconductor materials,including Si,Ge,GaAs,AlGaN,SiC,and so on.Finally,we highlight the current challenges and pros-pects of heterointegrating 2DLMs with traditional 3D semiconductors toward photodetection applications. | Weijie Liu Yiye Yu Meng Peng Zhihua Zheng Pengcheng Jian Yang Wang Yuanchen Zou Yongming Zhao Fang Wang Feng Wu Changqing Chen Jiangnan Dai Peng Wang Weida Hu | 2023 | InfoMat2023，5，10： | 0 |
| 7 | Interface engineering of ferroelectric-gated MoS_(2) phototransistor显示文摘Two-dimensional(2D)layered materials have received significant attention owing to their unique crystal structures as well as outstanding optical and electric properties in photoelectric detection.However,most 2D materials are very sensitive to the environment.Adsorbates and traps introduced during the preparation process have a negative effect on the performance of devices based on these materials.Here,we focus on a molybdenum disulfide(MoS2)phototransistor gated by ferroelectrics,and insert a hexagonal boron nitride(h-BN)layer between MoS2 and the ferroelectric film to improve the interface.To clarify the role of h-BN in this device,two parallel devices are prepared on the same MoS_(2) flake.One device is covered with h-BN,while the other is in direct contact with the ferroelectric film.The electronic and optoelectronic properties of these two devices are then measured and compared.Experimental results reveal that,compared to device without h-BN,the MoS_(2) phototransistor with h-BN exhibits higher carrier mobility(average value:85 cm^(2)·V^(-1)·s^(-1) and highest value:185 cm^(2)·V^(-1)·s^(-1)),larger responsivity(85 A·W-1),and larger detectivity(1.76×10^(13) Jones).Thus,this strategy is significant for the interface engineering and performance improvement of devices based on 2D materials. | Shuaiqin WU Xudong WANG Wei JIANG Luqi TU Yan CHEN Jingjing LIU Tie LIN Hong SHEN Jun GE Weida HU Xiangjian MENG Jianlu WANG Junhao CHU | 2021 | Science China(Information Sciences)2021，64，4： | 0 |
| 8 | A study on ionic gated MoS2 phototransistors显示文摘Molybdenum disulfide(MoS2) holds great promise in the future applications of nanoelectronics and optoelectronic devices. Exploring those interesting physical properties of MoS2 using a strong electric field provided by electrolyte-gel is a robust approach. Here, we fabricate an Mo S2 phototransistor gated by electrolyte-gel which is located on a fused silica substrate. Under the modulation of electrolyte-gel, the Schottky barrier between MoS2 and source/drain electrodes can be widely regulated from 11 to 179 me V. The MoS2 phototransistor exhibits excellent responsivity of 2.68 × 104 A/W and detectivity of 9.6 × 1010 Jones under visible incident light at negative gate voltage modulation. We attribute the optoelectronic performance enhancement to the Schottky barrier modulation of electrolyte-gel gating. It makes the device suitable for applications in high-sensitive photodetectors. | Binmin WU Xudong WANG Hongwei TANG Tie LIN Hong SHEN Weida HU Xiangjian MENG Wenzhong BAO Jianlu WANG Junhao CHU | 2019 | Science China(Information Sciences)2019，62，12： | 0 |
| 9 | Seamless Indoor-Outdoor Switching Localization Algorithm based on CKF显示文摘To solve the problem of large positioning error and discontinuous positioning of special forces members when moving in cross-region indoors and outdoors, and to compensate for the linearization error and local convergence problem that may exist in the extended Kalman filter(EKF)in nonlinear systems, that is,the iterative results may be trapped in a local optimum situation, a seamless indoor-outdoor switching localization algorithm based on cubature Kalman filter (CKF) is proposed. CKF does not require the computation of Jacobian matrices, which can improve computational efficiency and filtering accuracy to a certain extent. In the system, an inertial measurement unit (IMU) is employed to correct the positioning errors of ultra-wideband (UWB)and BeiDou navigation satellite system(BDS).The positioning data from UWB and BeiDou in cross-region are weighted fused and then fused with the data from the IMU using CKF to obtain the final accurate positioning information. This study designs a scene-switching mechanism to achieve seamless switching between indoor and outdoor positioning scenes. By jointly analyzing the positioning accuracy of UWB and BeiDou,the positioning scene is determined, and appropriate counting thresholds are set to avoid frequent erroneous scene switches. Experimental results show that the proposed algorithm achieves a positioning accuracy of approximately 21.7 cm in cross-region,which can enable seamless integration of indoor and outdoor positioning,avoid positioning jumps, and enhance positioning accuracy. | Gang Yang Guodong Hou Ningning Feng Weida Meng | 2024 | Journal of Communications and Information Networks2024，9，1： | 0 |
| 10 | Photopolymerization Initiated with Bis-[O-(α-Methacryl)]-α,β-Dioximes and Tertiary Amines显示文摘Among sensitizing systems, the combination of benzophenone(BP) and tertiary amines(TA) has been deeply studied. Since the structure of O-acyl-oximes is similar to that of BP and their triplet state energies are nearly equal, we want to know whether the behavior of the photopolymerization initiated with O-acyl-oximes—TA system is the same as that of photopolymerization initiated | Tong Weida, Sun Meng, Yang Yuliang, Tang Lijun and Yu Tongyin (Department of Material Science, Fudan University, Shanghai) | 1990 | Chemical Research in Chinese Universities1990，6，1： | 0 |
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